P

Inventor

FALCK ELMAR

DE25 patents
⚠️ This page may combine multiple inventors who share the name “FALCK ELMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

22 patents
US7696600B2Apr 13, 2010

IGBT device and related device having robustness under extreme conditions

INFINEON TECHNOLOGIES AG13 citations84
US7635909B2Dec 22, 2009

Semiconductor diode and IGBT

INFINEON TECHNOLOGIES AG13 citations84
US7233031B2Jun 19, 2007

Vertical power semiconductor component

INFINEON TECHNOLOGIES AG15 citations83
US9570542B2Feb 14, 2017

Semiconductor device including a vertical edge termination structure and method of manufacturing

INFINEON TECHNOLOGIES AG4 citations73
US9324783B2Apr 26, 2016

Soft switching semiconductor device and method for producing thereof

INFINEON TECHNOLOGIES AG6 citations73
US7291899B2Nov 6, 2007

Power semiconductor component

INFINEON TECHNOLOGIES AG7 citations73
US10388722B2Aug 20, 2019

Power semiconductor device termination structure

INFINEON TECHNOLOGIES AG2 citations72
US11848377B2Dec 19, 2023

Semiconductor component with edge termination region

INFINEON TECHNOLOGIES AG0 citations62
US11018249B2May 25, 2021

Semiconductor component with edge termination region

INFINEON TECHNOLOGIES AG0 citations62
US7705369B2Apr 27, 2010

High-voltage diode with optimized turn-off method and corresponding optimization method

INFINEON TECHNOLOGIES AG2 citations62
US7268079B2Sep 11, 2007

Method for fabricating a semiconductor having a field zone

INFINEON TECHNOLOGIES AG2 citations62
US12581699B2Mar 17, 2026

VDMOS having an edge termination region with doping concentration decreasing from inner region toward the edge

INFINEON TECHNOLOGIES AG0 citations52
US10943974B2Mar 9, 2021

Method for producing a semiconductor component having a channel stopper region

INFINEON TECHNOLOGIES AG0 citations52
US10049912B2Aug 14, 2018

Method of manufacturing a semiconductor device having a vertical edge termination structure

INFINEON TECHNOLOGIES AG0 citations52
US10038052B2Jul 31, 2018

Semiconductor device with channelstopper and method for producing the same

INFINEON TECHNOLOGIES AG1 citations52
US9385181B2Jul 5, 2016

Semiconductor diode and method of manufacturing a semiconductor diode

INFINEON TECHNOLOGIES AG0 citations51
US10497801B2Dec 3, 2019

Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone

INFINEON TECHNOLOGIES AG0 citations50
US10211325B2Feb 19, 2019

Semiconductor device including undulated profile of net doping in a drift zone

INFINEON TECHNOLOGIES AG0 citations50
US7511353B2Mar 31, 2009

Semiconductor diode and production method suitable therefor

INFINEON TECHNOLOGIES AG1 citations49
US9281360B1Mar 8, 2016

Semiconductor device with a shielding structure

INFINEON TECHNOLOGIES AG0 citations40
US9905634B2Feb 27, 2018

Power semiconductor device edge structure

INFINEON TECHNOLOGIES AG0 citations37
US9293524B2Mar 22, 2016

Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings

INFINEON TECHNOLOGIES AG0 citations36

INFINEON TECHNOLOGIES AUSTRIA

3 patents