Inventor
FALCK ELMAR
DE25 patents
⚠️ This page may combine multiple inventors who share the name “FALCK ELMAR”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
22 patentsUS7696600B2Apr 13, 2010
IGBT device and related device having robustness under extreme conditions
INFINEON TECHNOLOGIES AG13 citations84
US7635909B2Dec 22, 2009
Semiconductor diode and IGBT
INFINEON TECHNOLOGIES AG13 citations84
US7233031B2Jun 19, 2007
Vertical power semiconductor component
INFINEON TECHNOLOGIES AG15 citations83
US9570542B2Feb 14, 2017
Semiconductor device including a vertical edge termination structure and method of manufacturing
INFINEON TECHNOLOGIES AG4 citations73
US9324783B2Apr 26, 2016
Soft switching semiconductor device and method for producing thereof
INFINEON TECHNOLOGIES AG6 citations73
US7291899B2Nov 6, 2007
Power semiconductor component
INFINEON TECHNOLOGIES AG7 citations73
US10388722B2Aug 20, 2019
Power semiconductor device termination structure
INFINEON TECHNOLOGIES AG2 citations72
US11848377B2Dec 19, 2023
Semiconductor component with edge termination region
INFINEON TECHNOLOGIES AG0 citations62
US11018249B2May 25, 2021
Semiconductor component with edge termination region
INFINEON TECHNOLOGIES AG0 citations62
US7705369B2Apr 27, 2010
High-voltage diode with optimized turn-off method and corresponding optimization method
INFINEON TECHNOLOGIES AG2 citations62
US7268079B2Sep 11, 2007
Method for fabricating a semiconductor having a field zone
INFINEON TECHNOLOGIES AG2 citations62
US12581699B2Mar 17, 2026
VDMOS having an edge termination region with doping concentration decreasing from inner region toward the edge
INFINEON TECHNOLOGIES AG0 citations52
US10943974B2Mar 9, 2021
Method for producing a semiconductor component having a channel stopper region
INFINEON TECHNOLOGIES AG0 citations52
US10049912B2Aug 14, 2018
Method of manufacturing a semiconductor device having a vertical edge termination structure
INFINEON TECHNOLOGIES AG0 citations52
US10038052B2Jul 31, 2018
Semiconductor device with channelstopper and method for producing the same
INFINEON TECHNOLOGIES AG1 citations52
US9385181B2Jul 5, 2016
Semiconductor diode and method of manufacturing a semiconductor diode
INFINEON TECHNOLOGIES AG0 citations51
US10497801B2Dec 3, 2019
Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone
INFINEON TECHNOLOGIES AG0 citations50
US10211325B2Feb 19, 2019
Semiconductor device including undulated profile of net doping in a drift zone
INFINEON TECHNOLOGIES AG0 citations50
US7511353B2Mar 31, 2009
Semiconductor diode and production method suitable therefor
INFINEON TECHNOLOGIES AG1 citations49
US9281360B1Mar 8, 2016
Semiconductor device with a shielding structure
INFINEON TECHNOLOGIES AG0 citations40
US9905634B2Feb 27, 2018
Power semiconductor device edge structure
INFINEON TECHNOLOGIES AG0 citations37
US9293524B2Mar 22, 2016
Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field rings
INFINEON TECHNOLOGIES AG0 citations36
INFINEON TECHNOLOGIES AUSTRIA
3 patentsUS7781842B2Aug 24, 2010
Semiconductor device and method for producing it
INFINEON TECHNOLOGIES AUSTRIA4 citations63
US7750428B2Jul 6, 2010
Semiconductor device and method for producing it
INFINEON TECHNOLOGIES AUSTRIA3 citations63
US7880260B2Feb 1, 2011
Semiconductor device with a semiconductor body and method for its production
INFINEON TECHNOLOGIES AUSTRIA2 citations62