Inventor
TURI RAYMOND A
US39 patents
⚠️ This page may combine multiple inventors who share the name “TURI RAYMOND A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
30 patentsUS6300684B1Oct 9, 2001
Method for fabricating an array of ultra-small pores for chalcogenide memory cells
MICRON TECHNOLOGY INC220 citations99
US6104038AAug 15, 2000
Method for fabricating an array of ultra-small pores for chalcogenide memory cells
MICRON TECHNOLOGY INC350 citations99
US5985698ANov 16, 1999
Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
MICRON TECHNOLOGY INC327 citations99
US5879955AMar 9, 1999
Method for fabricating an array of ultra-small pores for chalcogenide memory cells
MICRON TECHNOLOGY INC468 citations99
US5831276ANov 3, 1998
Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
MICRON TECHNOLOGY INC409 citations99
US6111264AAug 29, 2000
Small pores defined by a disposable internal spacer for use in chalcogenide memories
MICRON TECHNOLOGY INC417 citations98
US5814527ASep 29, 1998
Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
MICRON TECHNOLOGY INC560 citations98
US6787401B2Sep 7, 2004
Method of making vertical diode structures
MICRON TECHNOLOGY INC33 citations96
US6534780B1Mar 18, 2003
Array of ultra-small pores for memory cells
MICRON TECHNOLOGY INC26 citations96
US6429449B1Aug 6, 2002
Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
MICRON TECHNOLOGY INC36 citations96
US6391688B1May 21, 2002
Method for fabricating an array of ultra-small pores for chalcogenide memory cells
MICRON TECHNOLOGY INC336 citations96
US6118135ASep 12, 2000
Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
MICRON TECHNOLOGY INC53 citations96
US6002140ADec 14, 1999
Method for fabricating an array of ultra-small pores for chalcogenide memory cells
MICRON TECHNOLOGY INC54 citations96
US5854102ADec 29, 1998
Vertical diode structures with low series resistance
MICRON TECHNOLOGY INC72 citations96
US6750091B1Jun 15, 2004
Diode formation method
MICRON TECHNOLOGY INC13 citations93
US6740552B2May 25, 2004
Method of making vertical diode structures
MICRON TECHNOLOGY INC15 citations93
US6653195B1Nov 25, 2003
Fabrication of three dimensional container diode for use with multi-state material in a non-volatile memory cell
MICRON TECHNOLOGY INC28 citations93
US6376358B1Apr 23, 2002
Method of forming plugs and local interconnect for embedded memory/system-on-chip (SOC) applications
MICRON TECHNOLOGY INC19 citations93
US6223432B1May 1, 2001
Method of forming dual conductive plugs
MICRON TECHNOLOGY INC22 citations93
US6194746B1Feb 27, 2001
Vertical diode structures with low series resistance
MICRON TECHNOLOGY INC28 citations93
US6677650B2Jan 13, 2004
Silicon plugs and local interconnect for embedded memory and system-on-chip (SOC) applications
MICRON TECHNOLOGY INC15 citations84
US6444520B1Sep 3, 2002
Method of forming dual conductive plugs
MICRON TECHNOLOGY INC15 citations84
US7170103B2Jan 30, 2007
Wafer with vertical diode structures
MICRON TECHNOLOGY INC9 citations82
US6797978B2Sep 28, 2004
Method for fabricating an array of ultra-small pores for chalcogenide memory cells
MICRON TECHNOLOGY INC12 citations80
US7166875B2Jan 23, 2007
Vertical diode structures
MICRON TECHNOLOGY INC5 citations74
US8034716B2Oct 11, 2011
Semiconductor structures including vertical diode structures and methods for making the same
MICRON TECHNOLOGY INC1 citations63
US7279725B2Oct 9, 2007
Vertical diode structures
MICRON TECHNOLOGY INC2 citations63
US6916710B2Jul 12, 2005
Method for fabricating an array of ultra-small pores for chalcogenide memory cells
MICRON TECHNOLOGY INC1 citations54
US7563666B2Jul 21, 2009
Semiconductor structures including vertical diode structures and methods of making the same
MICRON TECHNOLOGY INC0 citations52
US6421282B1Jul 16, 2002
Cascade-booted programming voltage circuit
MICRON TECHNOLOGY INC0 citations52
NCR CO
8 patentsUS4516313AMay 14, 1985
Unified CMOS/SNOS semiconductor fabrication process
NCR CO33 citations92
US4616245AOct 7, 1986
Direct-write silicon nitride EEPROM cell
NCR CO28 citations91
US4683554AJul 28, 1987
Direct write nonvolatile memory cells
NCR CO27 citations90
US4473941AOct 2, 1984
Method of fabricating zener diodes
NCR CO20 citations81
US5168464ADec 1, 1992
Nonvolatile differential memory device and method
NCR CO8 citations73
US4464824AAug 14, 1984
Epitaxial contact fabrication process
NCR CO10 citations72
US4748593AMay 31, 1988
High speed nonvolatile memory cell
NCR CO17 citations71
US4769788ASep 6, 1988
Shared line direct write nonvolatile memory cell array
NCR CO5 citations62