Inventor
GALLAGHER WILLIAM J
US76 patents
⚠️ This page may combine multiple inventors who share the name “GALLAGHER WILLIAM J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
26 patentsUS5055158AOct 8, 1991
Planarization of Josephson integrated circuit
IBM78 citations95
US9437668B1Sep 6, 2016
High resistivity soft magnetic material for miniaturized power converter
IBM24 citations94
US4831421AMay 16, 1989
Superconducting device
IBM24 citations89
US9793336B2Oct 17, 2017
High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
IBM4 citations84
US9590026B2Mar 7, 2017
High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
IBM6 citations84
US9331076B2May 3, 2016
Group III nitride integration with CMOS technology
IBM11 citations84
US9324495B2Apr 26, 2016
Planar inductors with closed magnetic loops
IBM10 citations84
US7505308B1Mar 17, 2009
Systems involving spin-transfer magnetic random access memory
IBM11 citations84
US7492631B1Feb 17, 2009
Methods involving resetting spin-torque magnetic random access memory
IBM13 citations84
US9685329B2Jun 20, 2017
Embedded gallium-nitride in silicon
IBM2 citations73
US9660069B2May 23, 2017
Group III nitride integration with CMOS technology
IBM3 citations73
US9362281B2Jun 7, 2016
Group III nitride integration with CMOS technology
IBM3 citations73
US9321634B2Apr 26, 2016
Forming magnetic microelectromechanical inductive components
IBM3 citations73
US8846529B2Sep 30, 2014
Electroless plating of cobalt alloys for on chip inductors
IBM5 citations73
US10217641B2Feb 26, 2019
Control of current collapse in thin patterned GaN
IBM2 citations71
US4962086AOct 9, 1990
High Tc superconductor - gallate crystal structures
IBM18 citations71
US12240753B2Mar 4, 2025
Micro-electromechanical device having a soft magnetic material electrolessly deposited on a palladium layer coated metal beam
IBM0 citations63
US11174159B2Nov 16, 2021
Micro-electromechanical device having a soft magnetic material electrolessly deposited on a metal layer
IBM0 citations63
US9911602B2Mar 6, 2018
Embedded gallium-nitride in silicon
IBM1 citations63
US9653532B2May 16, 2017
High resistivity soft magnetic material for miniaturized power converter
IBM1 citations63
US9564165B2Feb 7, 2017
Laminating magnetic cores for on-chip magnetic devices
IBM1 citations63
US9478708B2Oct 25, 2016
Embedded gallium—nitride in silicon
IBM1 citations63
US9193584B2Nov 24, 2015
Forming magnetic microelectromechanical inductive components
IBM1 citations63
US9105841B2Aug 11, 2015
Forming magnetic microelectromechanical inductive components
IBM3 citations63
US8755220B2Jun 17, 2014
Hybrid superconducting-magnetic memory cell and array
IBM2 citations63
US7920416B2Apr 5, 2011
Increased magnetic damping for toggle MRAM
IBM2 citations63
TAIWAN SEMICONDUCTOR MFG CO LTD
12 patentsUS9734883B1Aug 15, 2017
Reference circuit and MRAM
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US11502241B2Nov 15, 2022
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11081153B2Aug 3, 2021
Magnetic memory device with balancing synthetic anti-ferromagnetic layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11031544B2Jun 8, 2021
Memory device with superparamagnetic layer
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10541361B2Jan 21, 2020
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9767878B1Sep 19, 2017
Semiconductor memory device and method for controlling the same
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations73
US12058940B2Aug 6, 2024
Method for forming MTJS with lithography-variation independent critical dimension
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11404633B2Aug 2, 2022
Method for forming MTJS with lithography-variation independent critical dimension
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US12356868B2Jul 8, 2025
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12041855B2Jul 16, 2024
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11864466B2Jan 2, 2024
Magnetic random access memory and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11778924B2Oct 3, 2023
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
BATTELLE MEMORIAL INSTITUTE
4 patentsUS4143275AMar 6, 1979
Applying radiation
BATTELLE MEMORIAL INSTITUTE142 citations94
US4058486ANov 15, 1977
Producing X-rays
BATTELLE MEMORIAL INSTITUTE63 citations94
US4060769ANov 29, 1977
Directing radiation
BATTELLE MEMORIAL INSTITUTE39 citations91
US4002403AJan 11, 1977
Suppressing superradiance
BATTELLE MEMORIAL INSTITUTE34 citations91
FONTANA JR ROBERT E
2 patentsBULZACCHELLI JOHN F
2 patentsSALESFORCE COM INC
2 patentsUS10452363B2Oct 22, 2019
Methods and systems for evaluating bytecode in an on-demand service environment including translation of apex to bytecode
SALESFORCE COM INC1 citations73
US9507627B2Nov 29, 2016
Methods and systems for batch processing in an on-demand service environment
SALESFORCE COM INC2 citations63
INTEL CORP
1 patentFEE GREGORY D
1 patentShowing the top 50 of 76 patents by PatentIndex Score.