Inventor
BULLER JAMES F
US50 patents
⚠️ This page may combine multiple inventors who share the name “BULLER JAMES F”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ADVANCED MICRO DEVICES INC
26 patentsUS6707106B1Mar 16, 2004
Semiconductor device with tensile strain silicon introduced by compressive material in a buried oxide layer
ADVANCED MICRO DEVICES INC91 citations98
US6506642B1Jan 14, 2003
Removable spacer technique
ADVANCED MICRO DEVICES INC74 citations96
US6794256B1Sep 21, 2004
Method for asymmetric spacer formation
ADVANCED MICRO DEVICES INC62 citations94
US5811334ASep 22, 1998
Wafer cleaning procedure useful in the manufacture of a non-volatile memory device
ADVANCED MICRO DEVICES INC53 citations94
US6967363B1Nov 22, 2005
Lateral diode with multiple spacers
ADVANCED MICRO DEVICES INC39 citations93
US6936506B1Aug 30, 2005
Strained-silicon devices with different silicon thicknesses
ADVANCED MICRO DEVICES INC28 citations93
US6541321B1Apr 1, 2003
Method of making transistors with gate insulation layers of differing thickness
ADVANCED MICRO DEVICES INC28 citations93
US6949436B2Sep 27, 2005
Composite spacer liner for improved transistor performance
ADVANCED MICRO DEVICES INC19 citations92
US5549786AAug 27, 1996
Highly selective, highly uniform plasma etch process for spin-on glass
ADVANCED MICRO DEVICES INC51 citations92
US6833307B1Dec 21, 2004
Method for manufacturing a semiconductor component having an early halo implant
ADVANCED MICRO DEVICES INC38 citations91
US6037224AMar 14, 2000
Method for growing dual oxide thickness using nitrided oxides for oxidation suppression
ADVANCED MICRO DEVICES INC24 citations86
US7482252B1Jan 27, 2009
Method for reducing floating body effects in SOI semiconductor device without degrading mobility
ADVANCED MICRO DEVICES INC11 citations84
US6727136B1Apr 27, 2004
Formation of ultra-shallow depth source/drain extensions for MOS transistors
ADVANCED MICRO DEVICES INC13 citations84
US8050077B2Nov 1, 2011
Semiconductor device with transistor-based fuses and related programming method
ADVANCED MICRO DEVICES INC9 citations83
US7208383B1Apr 24, 2007
Method of manufacturing a semiconductor component
ADVANCED MICRO DEVICES INC19 citations83
US7417250B1Aug 26, 2008
Strained-silicon device with different silicon thicknesses
ADVANCED MICRO DEVICES INC5 citations74
US6727534B1Apr 27, 2004
Electrically programmed MOS transistor source/drain series resistance
ADVANCED MICRO DEVICES INC12 citations74
US6245649B1Jun 12, 2001
Method for forming a retrograde impurity profile
ADVANCED MICRO DEVICES INC7 citations74
US5976925ANov 2, 1999
Process of fabricating a semiconductor devise having asymmetrically-doped active region and gate electrode
ADVANCED MICRO DEVICES INC12 citations74
US6801096B1Oct 5, 2004
Ring oscillator with embedded scatterometry grate array
ADVANCED MICRO DEVICES INC10 citations73
US6821853B1Nov 23, 2004
Differential implant oxide process
ADVANCED MICRO DEVICES INC6 citations63
US6720227B1Apr 13, 2004
Method of forming source/drain regions in a semiconductor device
ADVANCED MICRO DEVICES INC4 citations63
US6566696B1May 20, 2003
Self-aligned VT implant
ADVANCED MICRO DEVICES INC5 citations63
US6274415B1Aug 14, 2001
Self-aligned Vt implant
ADVANCED MICRO DEVICES INC2 citations63
US7582493B2Sep 1, 2009
Distinguishing between dopant and line width variation components
ADVANCED MICRO DEVICES INC3 citations62
US7598161B2Oct 6, 2009
Method of forming transistor devices with different threshold voltages using halo implant shadowing
ADVANCED MICRO DEVICES INC1 citations50
GLOBALFOUNDRIES INC
11 patentsUS7943471B1May 17, 2011
Diode with asymmetric silicon germanium anode
GLOBALFOUNDRIES INC34 citations93
US8048753B2Nov 1, 2011
Charging protection device
GLOBALFOUNDRIES INC24 citations92
US7915658B2Mar 29, 2011
Semiconductor on insulator (SOI) device including a discharge path for a decoupling capacitor
GLOBALFOUNDRIES INC10 citations79
US7718503B2May 18, 2010
SOI device and method for its fabrication
GLOBALFOUNDRIES INC8 citations79
US8035098B1Oct 11, 2011
Transistor with asymmetric silicon germanium source region
GLOBALFOUNDRIES INC3 citations63
US7761838B2Jul 20, 2010
Method for fabricating a semiconductor device having an extended stress liner
GLOBALFOUNDRIES INC3 citations62
US7633103B2Dec 15, 2009
Semiconductor device and methods for fabricating same
GLOBALFOUNDRIES INC5 citations61
US8377781B2Feb 19, 2013
Transistor with asymmetric silicon germanium source region
GLOBALFOUNDRIES INC0 citations52
US9818816B2Nov 14, 2017
Metal capacitor design for improved reliability and good electrical connection
GLOBALFOUNDRIES INC0 citations51
US8357584B2Jan 22, 2013
Metal capacitor design for improved reliability and good electrical connection
GLOBALFOUNDRIES INC0 citations51
US7989891B2Aug 2, 2011
MOS structures with remote contacts and methods for fabricating the same
GLOBALFOUNDRIES INC0 citations37
HARRIS CORP
7 patentsUS5849627ADec 15, 1998
Bonded wafer processing with oxidative bonding
HARRIS CORP178 citations99
US5569620AOct 29, 1996
Bonded wafer processing with metal silicidation
HARRIS CORP194 citations99
US5387555AFeb 7, 1995
Bonded wafer processing with metal silicidation
HARRIS CORP149 citations99
US5517047AMay 14, 1996
Bonded wafer processing
HARRIS CORP53 citations96
US5362667ANov 8, 1994
Bonded wafer processing
HARRIS CORP93 citations96
US5728624AMar 17, 1998
Bonded wafer processing
HARRIS CORP52 citations92
US5293052AMar 8, 1994
SOT CMOS device having differentially doped body extension for providing improved backside leakage channel stop
HARRIS CORP23 citations91