Inventor
BEDNORZ JOHANNES GEORG
CH9 patents
⚠️ This page may combine multiple inventors who share the name “BEDNORZ JOHANNES GEORG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
7 patentsUS7376006B2May 20, 2008
Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
IBM138 citations97
US7324366B2Jan 29, 2008
Non-volatile memory architecture employing bipolar programmable resistance storage elements
IBM44 citations92
US5648321AJul 15, 1997
Process for manufacturing thin films by multi-layer deposition
IBM18 citations79
US6717199B2Apr 6, 2004
Tailored insulator properties for devices
IBM9 citations71
US7465952B2Dec 16, 2008
Programmable non-volatile resistance switching device
IBM3 citations59
US7872901B2Jan 18, 2011
Programmable-resistance memory cell
IBM0 citations51
US6593181B2Jul 15, 2003
Tailored insulator properties for devices
IBM1 citations49
BEDNORZ JOHANNES GEORG
2 patentsUS8060169B1Nov 15, 2011
Superconductive compounds having high transition temperature, and methods for their use and preparation
BEDNORZ JOHANNES GEORG4 citations54
US8688181B1Apr 1, 2014
Superconductive compounds having high transition temperature, and methods for their use and preparation
BEDNORZ JOHANNES GEORG0 citations44