Inventor
MOSHER DAN M
US13 patents
Patents
13 patentsUS5034337AJul 23, 1991
Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices
TEXAS INSTRUMENTS INC202 citations97
US6624487B1Sep 23, 2003
Drain-extended MOS ESD protection structure
TEXAS INSTRUMENTS INC57 citations96
US6531355B2Mar 11, 2003
LDMOS device with self-aligned RESURF region and method of fabrication
TEXAS INSTRUMENTS INC63 citations96
US6211552B1Apr 3, 2001
Resurf LDMOS device with deep drain region
TEXAS INSTRUMENTS INC122 citations95
US6548874B1Apr 15, 2003
Higher voltage transistors for sub micron CMOS processes
TEXAS INSTRUMENTS INC86 citations94
US6804095B2Oct 12, 2004
Drain-extended MOS ESD protection structure
TEXAS INSTRUMENTS INC34 citations92
US6521946B2Feb 18, 2003
Electrostatic discharge resistant extended drain metal oxide semiconductor transistor
TEXAS INSTRUMENTS INC36 citations92
US6483149B1Nov 19, 2002
LDMOS device with self-aligned resurf region and method of fabrication
TEXAS INSTRUMENTS INC47 citations92
US5256582AOct 26, 1993
Method of forming complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate
TEXAS INSTRUMENTS INC37 citations90
US5181095AJan 19, 1993
Complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate
TEXAS INSTRUMENTS INC23 citations90
US5153697AOct 6, 1992
Integrated circuit that combines multi-epitaxial power transistors with logic/analog devices, and a process to produce same
TEXAS INSTRUMENTS INC18 citations72
US7888196B2Feb 15, 2011
Trench isolation comprising process having multiple gate dielectric thicknesses and integrated circuits therefrom
TEXAS INSTRUMENTS INC4 citations63
US6620692B2Sep 16, 2003
Method of forming a metal oxide semiconductor transistor with self-aligned channel implant
TEXAS INSTRUMENTS INC6 citations63