Inventor
NORSTROEM HANS
SE23 patents
⚠️ This page may combine multiple inventors who share the name “NORSTROEM HANS”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ERICSSON TELEFON AB L M
11 patentsUS6657242B1Dec 2, 2003
Trench-isolated bipolar devices
ERICSSON TELEFON AB L M74 citations94
US6720229B2Apr 13, 2004
Integrated circuit inductor structure and non-destructive etch depth measurement
ERICSSON TELEFON AB L M33 citations92
US6440810B1Aug 27, 2002
Method in the fabrication of a silicon bipolar transistor
ERICSSON TELEFON AB L M32 citations92
US6413835B1Jul 2, 2002
Semiconductor structure and fabrication method of shallow and deep trenches
ERICSSON TELEFON AB L M21 citations92
US6610578B2Aug 26, 2003
Methods of manufacturing bipolar transistors for use at radio frequencies
ERICSSON TELEFON AB L M30 citations87
US6472723B1Oct 29, 2002
Substrate contacts and shielding devices in a semiconductor component
ERICSSON TELEFON AB L M46 citations87
US6459140B1Oct 1, 2002
Indium-enhanced bipolar transistor
ERICSSON TELEFON AB L M18 citations84
US6690080B2Feb 10, 2004
Semiconductor structure for isolation of semiconductor devices
ERICSSON TELEFON AB L M14 citations83
US6077752AJun 20, 2000
Method in the manufacturing of a semiconductor device
ERICSSON TELEFON AB L M6 citations74
US6333216B1Dec 25, 2001
Method in the manufacturing of a semiconductor device
ERICSSON TELEFON AB L M4 citations63
US6579773B2Jun 17, 2003
Transistor device and fabrication method thereof
ERICSSON TELEFON AB L M3 citations62
INFINEON TECHNOLOGIES AG
9 patentsUS7618865B2Nov 17, 2009
Method in the fabrication of a monolithically integrated vertical device on an SOI substrate
INFINEON TECHNOLOGIES AG8 citations84
US7119415B2Oct 10, 2006
Monolithically integrated circuit comprising a thin film resistor, and fabrication method thereof
INFINEON TECHNOLOGIES AG12 citations84
US7008851B2Mar 7, 2006
Silicon-germanium mesa transistor
INFINEON TECHNOLOGIES AG11 citations84
US7495312B2Feb 24, 2009
Method for producing vertical bipolar transistors and integrated circuit
INFINEON TECHNOLOGIES AG9 citations78
US7217609B2May 15, 2007
Semiconductor fabrication process, lateral PNP transistor, and integrated circuit
INFINEON TECHNOLOGIES AG9 citations74
US7025615B2Apr 11, 2006
Fabrication method, varactor, and integrated circuit
INFINEON TECHNOLOGIES AG7 citations72
US7456069B2Nov 25, 2008
Method in the fabrication of an integrated injection logic circuit
INFINEON TECHNOLOGIES AG3 citations63
US6852638B2Feb 8, 2005
Selective base etching
INFINEON TECHNOLOGIES AG3 citations63
US6911368B2Jun 28, 2005
Arrangement for preventing short-circuiting in a bipolar double-poly transistor and a method of fabricating such an arrangement
INFINEON TECHNOLOGIES AG0 citations42