Inventor
DEAK JAMES G
US47 patents
⚠️ This page may combine multiple inventors who share the name “DEAK JAMES G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
36 patentsUS7196882B2Mar 27, 2007
Magnetic tunnel junction device and its method of fabrication
MICRON TECHNOLOGY INC62 citations98
US7009874B2Mar 7, 2006
Low remanence flux concentrator for MRAM devices
MICRON TECHNOLOGY INC44 citations96
US7385842B2Jun 10, 2008
Magnetic memory having synthetic antiferromagnetic pinned layer
MICRON TECHNOLOGY INC40 citations93
US7306954B2Dec 11, 2007
Process flow for building MRAM structures
MICRON TECHNOLOGY INC17 citations93
US7083988B2Aug 1, 2006
Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
MICRON TECHNOLOGY INC20 citations93
US6962833B2Nov 8, 2005
Magnetic shield for integrated circuit packaging
MICRON TECHNOLOGY INC17 citations93
US6921953B2Jul 26, 2005
Self-aligned, low-resistance, efficient MRAM read/write conductors
MICRON TECHNOLOGY INC18 citations93
US6906396B2Jun 14, 2005
Magnetic shield for integrated circuit packaging
MICRON TECHNOLOGY INC32 citations93
US6828639B2Dec 7, 2004
Process flow for building MRAM structures
MICRON TECHNOLOGY INC23 citations93
US6728132B2Apr 27, 2004
Synthetic-ferrimagnet sense-layer for high density MRAM applications
MICRON TECHNOLOGY INC41 citations93
US6724652B2Apr 20, 2004
Low remanence flux concentrator for MRAM devices
MICRON TECHNOLOGY INC36 citations93
US6716644B2Apr 6, 2004
Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
MICRON TECHNOLOGY INC29 citations93
US6570783B1May 27, 2003
Asymmetric MRAM cell and bit design for improving bit yield
MICRON TECHNOLOGY INC29 citations93
US7002228B2Feb 21, 2006
Diffusion barrier for improving the thermal stability of MRAM devices
MICRON TECHNOLOGY INC32 citations87
US7112454B2Sep 26, 2006
System and method for reducing shorting in memory cells
MICRON TECHNOLOGY INC11 citations84
US6885576B2Apr 26, 2005
Closed flux magnetic memory
MICRON TECHNOLOGY INC14 citations84
US6807087B2Oct 19, 2004
Write current shunting compensation
MICRON TECHNOLOGY INC14 citations84
US7547559B2Jun 16, 2009
Method for forming MRAM bit having a bottom sense layer utilizing electroless plating
MICRON TECHNOLOGY INC6 citations74
US7183621B2Feb 27, 2007
MRAM memory cell having an electroplated bottom layer
MICRON TECHNOLOGY INC6 citations74
US7072209B2Jul 4, 2006
Magnetic memory having synthetic antiferromagnetic pinned layer
MICRON TECHNOLOGY INC6 citations74
US7038286B2May 2, 2006
Magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC6 citations74
US6946302B2Sep 20, 2005
Synthetic-ferrimagnet sense-layer for high density MRAM applications
MICRON TECHNOLOGY INC8 citations74
US6833278B2Dec 21, 2004
Low remanence flux concentrator for MRAM devices
MICRON TECHNOLOGY INC12 citations74
US6816402B2Nov 9, 2004
Row and column line geometries for improving MRAM write operations
MICRON TECHNOLOGY INC10 citations74
US6780653B2Aug 24, 2004
Methods of forming magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC6 citations74
US6781174B2Aug 24, 2004
Magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC5 citations74
US7855085B2Dec 21, 2010
System and method for reducing shorting in memory cells
MICRON TECHNOLOGY INC4 citations63
US7601547B2Oct 13, 2009
Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
MICRON TECHNOLOGY INC1 citations63
US7411262B2Aug 12, 2008
Self-aligned, low-resistance, efficient memory array
MICRON TECHNOLOGY INC4 citations63
US7381573B2Jun 3, 2008
Self-aligned, low-resistance, efficient memory array
MICRON TECHNOLOGY INC4 citations63
US7358553B2Apr 15, 2008
System and method for reducing shorting in memory cells
MICRON TECHNOLOGY INC1 citations63
US7160738B2Jan 9, 2007
Magnetic annealing sequences for patterned MRAM synthetic antiferromagnetic pinned layers
MICRON TECHNOLOGY INC4 citations63
US6780654B2Aug 24, 2004
Methods of forming magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC3 citations63
US7279762B2Oct 9, 2007
Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assemblies
MICRON TECHNOLOGY INC0 citations52
US7274591B2Sep 25, 2007
Write current shunting compensation
MICRON TECHNOLOGY INC0 citations52
US7075819B2Jul 11, 2006
Closed flux magnetic memory
MICRON TECHNOLOGY INC0 citations52
DEAK JAMES G
6 patentsUS9341686B2May 17, 2016
Single-package power meter
DEAK JAMES G21 citations92
US8294577B2Oct 23, 2012
Stressed magnetoresistive tamper detection devices
DEAK JAMES G11 citations84
US9182457B2Nov 10, 2015
Isolated voltage transducer
DEAK JAMES G2 citations62
US9116199B2Aug 25, 2015
Full-bridge magnetoresistive rotation sensors and mass fabrication method
DEAK JAMES G3 citations62
US9030200B2May 12, 2015
Spin dependent tunneling devices with magnetization states based on stress conditions
DEAK JAMES G2 citations62
US8933523B2Jan 13, 2015
Single-chip referenced full-bridge magnetic field sensor
DEAK JAMES G2 citations62
NVE CORP
5 patentsUS7230844B2Jun 12, 2007
Thermomagnetically assisted spin-momentum-transfer switching memory
NVE CORP86 citations98
US7148531B2Dec 12, 2006
Magnetoresistive memory SOI cell
NVE CORP27 citations93
US7868404B2Jan 11, 2011
Vortex spin momentum transfer magnetoresistive device
NVE CORP7 citations84
US7468664B2Dec 23, 2008
Enclosure tamper detection and protection
NVE CORP18 citations84
US7715228B2May 11, 2010
Cross-point magnetoresistive memory
NVE CORP7 citations74