Inventor
KIM CHI-WOOK
KR28 patents
Patents
28 patentsUS6526473B1Feb 25, 2003
Memory module system for controlling data input and output by connecting selected memory modules to a data line
SAMSUNG ELECTRONICS CO LTD149 citations98
US6525988B2Feb 25, 2003
Clock generating circuits controlling activation of a delay locked loop circuit on transition to a standby mode of a semiconductor memory device and methods for operating the same
SAMSUNG ELECTRONICS CO LTD120 citations97
US6324119B1Nov 27, 2001
Data input circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD68 citations96
US6898139B2May 24, 2005
Integrated circuit memory devices and operating methods that are configured to output data bits at a lower rate in a test mode of operation
SAMSUNG ELECTRONICS CO LTD19 citations92
US6087851AJul 11, 2000
Method and apparatus for configuring a semiconductor device for compatibility with multiple logic interfaces
SAMSUNG ELECTRONICS CO LTD23 citations92
US7038972B2May 2, 2006
Double data rate synchronous dynamic random access memory semiconductor device
SAMSUNG ELECTRONICS CO LTD18 citations84
US6795372B2Sep 21, 2004
Bit line sense amplifier driving control circuits and methods for synchronous drams that selectively supply and suspend supply of operating voltages
SAMSUNG ELECTRONICS CO LTD15 citations83
US6236619B1May 22, 2001
Synchronous dynamic random access memory semiconductor device having write-interrupt-write function
SAMSUNG ELECTRONICS CO LTD15 citations83
US7161823B2Jan 9, 2007
Semiconductor memory device and method of arranging signal and power lines thereof
SAMSUNG ELECTRONICS CO LTD20 citations82
US7184347B2Feb 27, 2007
Semiconductor memory devices having separate read and write global data lines
SAMSUNG ELECTRONICS CO LTD9 citations74
US7084684B2Aug 1, 2006
Delay stage insensitive to operating voltage and delay circuit including the same
SAMSUNG ELECTRONICS CO LTD10 citations74
US7057446B2Jun 6, 2006
Reference voltage generating circuit and internal voltage generating circuit for controlling internal voltage level
SAMSUNG ELECTRONICS CO LTD9 citations74
US9824946B2Nov 21, 2017
Test architecture of semiconductor device, test system, and method of testing semicondurctor devices at wafer level
SAMSUNG ELECTRONICS CO LTD4 citations72
US7110316B2Sep 19, 2006
Shared decoupling capacitance
SAMSUNG ELECTRONICS CO LTD6 citations72
US7355901B2Apr 8, 2008
Synchronous output buffer, synchronous memory device and method of testing access time
SAMSUNG ELECTRONICS CO LTD4 citations63
US7317645B2Jan 8, 2008
Redundancy repair circuit and a redundancy repair method therefor
SAMSUNG ELECTRONICS CO LTD6 citations63
US7068083B2Jun 27, 2006
Synchronous output buffer, synchronous memory device and method of testing access time
SAMSUNG ELECTRONICS CO LTD4 citations63
US7525858B2Apr 28, 2009
Semiconductor memory device having local sense amplifier
SAMSUNG ELECTRONICS CO LTD4 citations62
US7336518B2Feb 26, 2008
Layout for equalizer and data line sense amplifier employed in a high speed memory device
SAMSUNG ELECTRONICS CO LTD6 citations62
US7075849B2Jul 11, 2006
Semiconductor memory device and layout method thereof
SAMSUNG ELECTRONICS CO LTD2 citations62
US7495472B2Feb 24, 2009
Circuits/methods for electrically isolating fuses in integrated circuits
SAMSUNG ELECTRONICS CO LTD3 citations61
US7352646B2Apr 1, 2008
Semiconductor memory device and method of arranging a decoupling capacitor thereof
SAMSUNG ELECTRONICS CO LTD4 citations60
US6229756B1May 8, 2001
Semiconductor memory device capable of preventing mis-operation due to load of column address line
SAMSUNG ELECTRONICS CO LTD4 citations60
US7298199B2Nov 20, 2007
Substrate bias voltage generating circuit for use in a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD4 citations58
US7352636B2Apr 1, 2008
Circuit and method for generating boosted voltage in semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations51
US6777987B2Aug 17, 2004
Signal buffer for high-speed signal transmission and signal line driving circuit including the same
SAMSUNG ELECTRONICS CO LTD1 citations51
US7688651B2Mar 30, 2010
Methods and devices for regulating the timing of control signals in integrated circuit memory devices
SAMSUNG ELECTRONICS CO LTD0 citations50
US7692985B2Apr 6, 2010
Semiconductor memory device capable of detecting bridge defects and bridge defect detecting method performed in the semiconductor memory device
SAMSUNG ELECTRONICS CO LTD0 citations49