P

Inventor

DENG XIAOWEI

US55 patents
⚠️ This page may combine multiple inventors who share the name “DENG XIAOWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TEXAS INSTRUMENTS INC

32 patents
US7164596B1Jan 16, 2007

SRAM cell with column select line

TEXAS INSTRUMENTS INC72 citations98
US6925025B2Aug 2, 2005

SRAM device and a method of powering-down the same

TEXAS INSTRUMENTS INC94 citations98
US7027346B2Apr 11, 2006

Bit line control for low power in standby

TEXAS INSTRUMENTS INC46 citations96
US6573549B1Jun 3, 2003

Dynamic threshold voltage 6T SRAM cell

TEXAS INSTRUMENTS INC64 citations96
US7061820B2Jun 13, 2006

Voltage keeping scheme for low-leakage memory devices

TEXAS INSTRUMENTS INC38 citations93
US7039818B2May 2, 2006

Low leakage SRAM scheme

TEXAS INSTRUMENTS INC28 citations93
US6731533B2May 4, 2004

Loadless 4T SRAM cell with PMOS drivers

TEXAS INSTRUMENTS INC25 citations93
US6362660B1Mar 26, 2002

CMOS latch and register circuitry using quantum mechanical tunneling structures

TEXAS INSTRUMENTS INC18 citations93
US7816740B2Oct 19, 2010

Memory cell layout structure with outer bitline

TEXAS INSTRUMENTS INC38 citations92
US6922370B2Jul 26, 2005

High performance SRAM device and method of powering-down the same

TEXAS INSTRUMENTS INC20 citations92
US6870375B2Mar 22, 2005

System and method for measuring a capacitance associated with an integrated circuit

TEXAS INSTRUMENTS INC30 citations87
US8716808B2May 6, 2014

Static random-access memory cell array with deep well regions

TEXAS INSTRUMENTS INC7 citations84
US8379467B2Feb 19, 2013

Structure and methods for measuring margins in an SRAM bit

TEXAS INSTRUMENTS INC8 citations84
US7924640B2Apr 12, 2011

Method for memory cell characterization using universal structure

TEXAS INSTRUMENTS INC13 citations84
US6539526B1Mar 25, 2003

Method and apparatus for determining capacitances for a device within an integrated circuit

TEXAS INSTRUMENTS INC15 citations84
US7936623B2May 3, 2011

Universal structure for memory cell characterization

TEXAS INSTRUMENTS INC11 citations83
US7298663B2Nov 20, 2007

Bit line control for low power in standby

TEXAS INSTRUMENTS INC5 citations74
US6975143B2Dec 13, 2005

Static logic design for CMOS

TEXAS INSTRUMENTS INC9 citations74
US6366134B1Apr 2, 2002

CMOS dynamic logic circuitry using quantum mechanical tunneling structures

TEXAS INSTRUMENTS INC6 citations74
US9412437B2Aug 9, 2016

SRAM with buffered-read bit cells and its testing

TEXAS INSTRUMENTS INC2 citations63
US7821816B2Oct 26, 2010

Method for constructing Shmoo plots for SRAMs

TEXAS INSTRUMENTS INC3 citations63
US6552566B2Apr 22, 2003

Logic array circuits using silicon-on-insulator logic

TEXAS INSTRUMENTS INC2 citations63
US11355182B2Jun 7, 2022

Array power supply-based screening of static random access memory cells for bias temperature instability

TEXAS INSTRUMENTS INC0 citations62
US6956398B1Oct 18, 2005

Leakage current reduction method

TEXAS INSTRUMENTS INC2 citations60
US9805788B2Oct 31, 2017

Array power supply-based screening of static random access memory cells for bias temperature instability

TEXAS INSTRUMENTS INC0 citations52
US9576643B2Feb 21, 2017

Array power supply-based screening of static random access memory cells for bias temperature instability

TEXAS INSTRUMENTS INC0 citations52
US9466356B2Oct 11, 2016

Array power supply-based screening of static random access memory cells for bias temperature instability

TEXAS INSTRUMENTS INC0 citations52
US8472229B2Jun 25, 2013

Array-based integrated circuit with reduced proximity effects

TEXAS INSTRUMENTS INC1 citations52
US7499354B2Mar 3, 2009

Method for testing transistors having an active region that is common with other transistors and a testing circuit for accomplishing the same

TEXAS INSTRUMENTS INC1 citations52
US7301849B2Nov 27, 2007

System for reducing row periphery power consumption in memory devices

TEXAS INSTRUMENTS INC0 citations52
US7120082B2Oct 10, 2006

System for reducing row periphery power consumption in memory devices

TEXAS INSTRUMENTS INC0 citations52
US6801057B2Oct 5, 2004

Silicon-on-insulator dynamic logic

TEXAS INSTRUMENTS INC0 citations52

DENG XIAOWEI

16 patents
US8760927B2Jun 24, 2014

Efficient static random-access memory layout

DENG XIAOWEI11 citations84
US8654575B2Feb 18, 2014

Disturb-free static random access memory cell

DENG XIAOWEI18 citations84
US8498143B2Jul 30, 2013

Solid-state memory cell with improved read stability

DENG XIAOWEI13 citations84
US8462542B2Jun 11, 2013

Bit-by-bit write assist for solid-state memory

DENG XIAOWEI13 citations84
US8305798B2Nov 6, 2012

Memory cell with equalization write assist in solid-state memory

DENG XIAOWEI9 citations84
US8228749B2Jul 24, 2012

Margin testing of static random access memory cells

DENG XIAOWEI12 citations83
US9455021B2Sep 27, 2016

Array power supply-based screening of static random access memory cells for bias temperature instability

DENG XIAOWEI3 citations73
US8670265B2Mar 11, 2014

Reducing power in SRAM using supply voltage control

DENG XIAOWEI4 citations73
US8437213B2May 7, 2013

Characterization of bits in a functional memory

DENG XIAOWEI6 citations72
US8432760B2Apr 30, 2013

Method of screening static random access memories for unstable memory cells

DENG XIAOWEI3 citations63
US8233341B2Jul 31, 2012

Method and structure for SRAM cell trip voltage measurement

DENG XIAOWEI5 citations63
US8139431B2Mar 20, 2012

Structure and methods for measuring margins in an SRAM bit

DENG XIAOWEI2 citations63
US8654562B2Feb 18, 2014

Static random access memory cell with single-sided buffer and asymmetric construction

DENG XIAOWEI3 citations62
US9472268B2Oct 18, 2016

SRAM with buffered-read bit cells and its testing

DENG XIAOWEI0 citations52
US8472228B2Jun 25, 2013

Array-based integrated circuit with reduced proximity effects

DENG XIAOWEI1 citations52
US8174914B2May 8, 2012

Method and structure for SRAM Vmin/Vmax measurement

DENG XIAOWEI0 citations52

HOUSTON THEODORE W

1 patent

PIOUS BEENA

1 patent

Showing the top 50 of 55 patents by PatentIndex Score.