Inventor
DENG XIAOWEI
US55 patents
⚠️ This page may combine multiple inventors who share the name “DENG XIAOWEI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
32 patentsUS7164596B1Jan 16, 2007
SRAM cell with column select line
TEXAS INSTRUMENTS INC72 citations98
US6925025B2Aug 2, 2005
SRAM device and a method of powering-down the same
TEXAS INSTRUMENTS INC94 citations98
US7027346B2Apr 11, 2006
Bit line control for low power in standby
TEXAS INSTRUMENTS INC46 citations96
US6573549B1Jun 3, 2003
Dynamic threshold voltage 6T SRAM cell
TEXAS INSTRUMENTS INC64 citations96
US7061820B2Jun 13, 2006
Voltage keeping scheme for low-leakage memory devices
TEXAS INSTRUMENTS INC38 citations93
US7039818B2May 2, 2006
Low leakage SRAM scheme
TEXAS INSTRUMENTS INC28 citations93
US6731533B2May 4, 2004
Loadless 4T SRAM cell with PMOS drivers
TEXAS INSTRUMENTS INC25 citations93
US6362660B1Mar 26, 2002
CMOS latch and register circuitry using quantum mechanical tunneling structures
TEXAS INSTRUMENTS INC18 citations93
US7816740B2Oct 19, 2010
Memory cell layout structure with outer bitline
TEXAS INSTRUMENTS INC38 citations92
US6922370B2Jul 26, 2005
High performance SRAM device and method of powering-down the same
TEXAS INSTRUMENTS INC20 citations92
US6870375B2Mar 22, 2005
System and method for measuring a capacitance associated with an integrated circuit
TEXAS INSTRUMENTS INC30 citations87
US8716808B2May 6, 2014
Static random-access memory cell array with deep well regions
TEXAS INSTRUMENTS INC7 citations84
US8379467B2Feb 19, 2013
Structure and methods for measuring margins in an SRAM bit
TEXAS INSTRUMENTS INC8 citations84
US7924640B2Apr 12, 2011
Method for memory cell characterization using universal structure
TEXAS INSTRUMENTS INC13 citations84
US6539526B1Mar 25, 2003
Method and apparatus for determining capacitances for a device within an integrated circuit
TEXAS INSTRUMENTS INC15 citations84
US7936623B2May 3, 2011
Universal structure for memory cell characterization
TEXAS INSTRUMENTS INC11 citations83
US7298663B2Nov 20, 2007
Bit line control for low power in standby
TEXAS INSTRUMENTS INC5 citations74
US6975143B2Dec 13, 2005
Static logic design for CMOS
TEXAS INSTRUMENTS INC9 citations74
US6366134B1Apr 2, 2002
CMOS dynamic logic circuitry using quantum mechanical tunneling structures
TEXAS INSTRUMENTS INC6 citations74
US9412437B2Aug 9, 2016
SRAM with buffered-read bit cells and its testing
TEXAS INSTRUMENTS INC2 citations63
US7821816B2Oct 26, 2010
Method for constructing Shmoo plots for SRAMs
TEXAS INSTRUMENTS INC3 citations63
US6552566B2Apr 22, 2003
Logic array circuits using silicon-on-insulator logic
TEXAS INSTRUMENTS INC2 citations63
US11355182B2Jun 7, 2022
Array power supply-based screening of static random access memory cells for bias temperature instability
TEXAS INSTRUMENTS INC0 citations62
US6956398B1Oct 18, 2005
Leakage current reduction method
TEXAS INSTRUMENTS INC2 citations60
US9805788B2Oct 31, 2017
Array power supply-based screening of static random access memory cells for bias temperature instability
TEXAS INSTRUMENTS INC0 citations52
US9576643B2Feb 21, 2017
Array power supply-based screening of static random access memory cells for bias temperature instability
TEXAS INSTRUMENTS INC0 citations52
US9466356B2Oct 11, 2016
Array power supply-based screening of static random access memory cells for bias temperature instability
TEXAS INSTRUMENTS INC0 citations52
US8472229B2Jun 25, 2013
Array-based integrated circuit with reduced proximity effects
TEXAS INSTRUMENTS INC1 citations52
US7499354B2Mar 3, 2009
Method for testing transistors having an active region that is common with other transistors and a testing circuit for accomplishing the same
TEXAS INSTRUMENTS INC1 citations52
US7301849B2Nov 27, 2007
System for reducing row periphery power consumption in memory devices
TEXAS INSTRUMENTS INC0 citations52
US7120082B2Oct 10, 2006
System for reducing row periphery power consumption in memory devices
TEXAS INSTRUMENTS INC0 citations52
US6801057B2Oct 5, 2004
Silicon-on-insulator dynamic logic
TEXAS INSTRUMENTS INC0 citations52
DENG XIAOWEI
16 patentsUS8760927B2Jun 24, 2014
Efficient static random-access memory layout
DENG XIAOWEI11 citations84
US8654575B2Feb 18, 2014
Disturb-free static random access memory cell
DENG XIAOWEI18 citations84
US8498143B2Jul 30, 2013
Solid-state memory cell with improved read stability
DENG XIAOWEI13 citations84
US8462542B2Jun 11, 2013
Bit-by-bit write assist for solid-state memory
DENG XIAOWEI13 citations84
US8305798B2Nov 6, 2012
Memory cell with equalization write assist in solid-state memory
DENG XIAOWEI9 citations84
US8228749B2Jul 24, 2012
Margin testing of static random access memory cells
DENG XIAOWEI12 citations83
US9455021B2Sep 27, 2016
Array power supply-based screening of static random access memory cells for bias temperature instability
DENG XIAOWEI3 citations73
US8670265B2Mar 11, 2014
Reducing power in SRAM using supply voltage control
DENG XIAOWEI4 citations73
US8437213B2May 7, 2013
Characterization of bits in a functional memory
DENG XIAOWEI6 citations72
US8432760B2Apr 30, 2013
Method of screening static random access memories for unstable memory cells
DENG XIAOWEI3 citations63
US8233341B2Jul 31, 2012
Method and structure for SRAM cell trip voltage measurement
DENG XIAOWEI5 citations63
US8139431B2Mar 20, 2012
Structure and methods for measuring margins in an SRAM bit
DENG XIAOWEI2 citations63
US8654562B2Feb 18, 2014
Static random access memory cell with single-sided buffer and asymmetric construction
DENG XIAOWEI3 citations62
US9472268B2Oct 18, 2016
SRAM with buffered-read bit cells and its testing
DENG XIAOWEI0 citations52
US8472228B2Jun 25, 2013
Array-based integrated circuit with reduced proximity effects
DENG XIAOWEI1 citations52
US8174914B2May 8, 2012
Method and structure for SRAM Vmin/Vmax measurement
DENG XIAOWEI0 citations52
HOUSTON THEODORE W
1 patentPIOUS BEENA
1 patentShowing the top 50 of 55 patents by PatentIndex Score.