P

Inventor

KIM YOUNG-WUG

KR36 patents
⚠️ This page may combine multiple inventors who share the name “KIM YOUNG-WUG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

25 patents
US6498370B1Dec 24, 2002

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD87 citations98
US6521959B2Feb 18, 2003

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD85 citations97
US6407429B1Jun 18, 2002

Semiconductor device having silicon on insulator and fabricating method therefor

SAMSUNG ELECTRONICS CO LTD45 citations96
US6900503B2May 31, 2005

SRAM formed on SOI substrate

SAMSUNG ELECTRONICS CO LTD28 citations92
US6855641B2Feb 15, 2005

CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof

SAMSUNG ELECTRONICS CO LTD31 citations92
US6806157B2Oct 19, 2004

Metal oxide semiconductor field effect transistor for reducing resistance between source and drain and method for fabricating the same

SAMSUNG ELECTRONICS CO LTD19 citations92
US6794716B2Sep 21, 2004

SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD22 citations92
US6548877B2Apr 15, 2003

Metal oxide semiconductor field effect transistor for reducing resistance between source and drain

SAMSUNG ELECTRONICS CO LTD27 citations92
US6492260B1Dec 10, 2002

Method of fabricating damascene metal wiring

SAMSUNG ELECTRONICS CO LTD43 citations92
US6911397B2Jun 28, 2005

Method of forming dual damascene interconnection using low-k dielectric

SAMSUNG ELECTRONICS CO LTD42 citations91
US6255697B1Jul 3, 2001

Integrated circuit devices including distributed and isolated dummy conductive regions

SAMSUNG ELECTRONICS CO LTD29 citations89
US6150249ANov 21, 2000

Methods of forming niobium-near noble metal contact structures for integrated circuits

SAMSUNG ELECTRONICS CO LTD30 citations89
US7323420B2Jan 29, 2008

Method for manufacturing multi-thickness gate dielectric layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD11 citations84
US7179750B2Feb 20, 2007

Method for manufacturing multi-thickness gate dielectric layer of semiconductor device

SAMSUNG ELECTRONICS CO LTD11 citations84
US7348636B2Mar 25, 2008

CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof

SAMSUNG ELECTRONICS CO LTD11 citations83
US6706569B2Mar 16, 2004

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD10 citations74
US6703280B2Mar 9, 2004

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

SAMSUNG ELECTRONICS CO LTD8 citations74
US6689648B2Feb 10, 2004

Semiconductor device having silicon on insulator and fabricating method therefor

SAMSUNG ELECTRONICS CO LTD11 citations74
US5674782AOct 7, 1997

Method for efficiently removing by-products produced in dry-etching

SAMSUNG ELECTRONICS CO LTD15 citations74
US6074907AJun 13, 2000

Method of manufacturing capacitor for analog function

SAMSUNG ELECTRONICS CO LTD10 citations73
US6656814B2Dec 2, 2003

Methods of fabricating integrated circuit devices including distributed and isolated dummy conductive regions

SAMSUNG ELECTRONICS CO LTD7 citations70
US6437445B1Aug 20, 2002

Niobium-near noble metal contact structures for integrated circuits

SAMSUNG ELECTRONICS CO LTD10 citations70
US7410843B2Aug 12, 2008

Methods for fabricating reduced floating body effect static random access memory cells

SAMSUNG ELECTRONICS CO LTD2 citations60
US7105900B2Sep 12, 2006

Reduced floating body effect static random access memory cells and methods for fabricating the same

SAMSUNG ELECTRONICS CO LTD2 citations60
US7217622B2May 15, 2007

Semiconductor device and method of manufacturing the semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations52

SEOUL VIOSYS CO LTD

8 patents

LG DISPLAY CO LTD

1 patent

SK HYNIX INC

1 patent

SEOUL OPTO DEVICE CO LTD

1 patent