Inventor
KIM YOUNG-WUG
KR36 patents
⚠️ This page may combine multiple inventors who share the name “KIM YOUNG-WUG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
25 patentsUS6498370B1Dec 24, 2002
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD87 citations98
US6521959B2Feb 18, 2003
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD85 citations97
US6407429B1Jun 18, 2002
Semiconductor device having silicon on insulator and fabricating method therefor
SAMSUNG ELECTRONICS CO LTD45 citations96
US6900503B2May 31, 2005
SRAM formed on SOI substrate
SAMSUNG ELECTRONICS CO LTD28 citations92
US6855641B2Feb 15, 2005
CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof
SAMSUNG ELECTRONICS CO LTD31 citations92
US6806157B2Oct 19, 2004
Metal oxide semiconductor field effect transistor for reducing resistance between source and drain and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD19 citations92
US6794716B2Sep 21, 2004
SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD22 citations92
US6548877B2Apr 15, 2003
Metal oxide semiconductor field effect transistor for reducing resistance between source and drain
SAMSUNG ELECTRONICS CO LTD27 citations92
US6492260B1Dec 10, 2002
Method of fabricating damascene metal wiring
SAMSUNG ELECTRONICS CO LTD43 citations92
US6911397B2Jun 28, 2005
Method of forming dual damascene interconnection using low-k dielectric
SAMSUNG ELECTRONICS CO LTD42 citations91
US6255697B1Jul 3, 2001
Integrated circuit devices including distributed and isolated dummy conductive regions
SAMSUNG ELECTRONICS CO LTD29 citations89
US6150249ANov 21, 2000
Methods of forming niobium-near noble metal contact structures for integrated circuits
SAMSUNG ELECTRONICS CO LTD30 citations89
US7323420B2Jan 29, 2008
Method for manufacturing multi-thickness gate dielectric layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations84
US7179750B2Feb 20, 2007
Method for manufacturing multi-thickness gate dielectric layer of semiconductor device
SAMSUNG ELECTRONICS CO LTD11 citations84
US7348636B2Mar 25, 2008
CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof
SAMSUNG ELECTRONICS CO LTD11 citations83
US6706569B2Mar 16, 2004
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD10 citations74
US6703280B2Mar 9, 2004
SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD8 citations74
US6689648B2Feb 10, 2004
Semiconductor device having silicon on insulator and fabricating method therefor
SAMSUNG ELECTRONICS CO LTD11 citations74
US5674782AOct 7, 1997
Method for efficiently removing by-products produced in dry-etching
SAMSUNG ELECTRONICS CO LTD15 citations74
US6074907AJun 13, 2000
Method of manufacturing capacitor for analog function
SAMSUNG ELECTRONICS CO LTD10 citations73
US6656814B2Dec 2, 2003
Methods of fabricating integrated circuit devices including distributed and isolated dummy conductive regions
SAMSUNG ELECTRONICS CO LTD7 citations70
US6437445B1Aug 20, 2002
Niobium-near noble metal contact structures for integrated circuits
SAMSUNG ELECTRONICS CO LTD10 citations70
US7410843B2Aug 12, 2008
Methods for fabricating reduced floating body effect static random access memory cells
SAMSUNG ELECTRONICS CO LTD2 citations60
US7105900B2Sep 12, 2006
Reduced floating body effect static random access memory cells and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD2 citations60
US7217622B2May 15, 2007
Semiconductor device and method of manufacturing the semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
SEOUL VIOSYS CO LTD
8 patentsUS9991424B2Jun 5, 2018
Light-emitting diode and method for manufacturing same
SEOUL VIOSYS CO LTD4 citations72
US9362449B2Jun 7, 2016
High efficiency light emitting diode and method of fabricating the same
SEOUL VIOSYS CO LTD5 citations72
US9236533B2Jan 12, 2016
Light emitting diode and method for manufacturing same
SEOUL VIOSYS CO LTD3 citations72
US9653018B2May 16, 2017
Light-emitting diode driving device, driving method and light-emitting diode lighting module comprising the same
SEOUL VIOSYS CO LTD1 citations51
US9508909B2Nov 29, 2016
Light-emitting diode and method for manufacturing same
SEOUL VIOSYS CO LTD0 citations51
US9018027B2Apr 28, 2015
Method of fabricating gallium nitride-based semiconductor device
SEOUL VIOSYS CO LTD1 citations51
US9450141B2Sep 20, 2016
Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods
SEOUL VIOSYS CO LTD0 citations50
US9373496B2Jun 21, 2016
Substrate recycling method and recycled substrate
SEOUL VIOSYS CO LTD0 citations44