Inventor

KANG HEE-SUNG

KR37 patents

⚠️ This page may combine multiple inventors who share the name “KANG HEE-SUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG HEE-SUNG

SAMSUNG ELECTRONICS CO LTD

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

Methods for fabricating MOS transistors with notched gate electrodes

CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof

SOI MOSFET having body contact for preventing floating body effect and method of fabricating the same

Semiconductor device having junction diode and fabricating method therefor

Method of forming a pattern in a semiconductor device and method of forming a gate using the same

Method for manufacturing multi-thickness gate dielectric layer of semiconductor device

Method for manufacturing multi-thickness gate dielectric layer of semiconductor device

Method of manufacturing an SOI type semiconductor that can restrain floating body effect

Semiconductor device having decoupling capacitors and dummy transistors

Shared contact structure, semiconductor device and method of fabricating the semiconductor device

CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereof

Dual-damascene metal wiring patterns for integrated circuit devices

Methods of fabricating MOS field effect transistors with pocket regions using implant blocking patterns

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

SOI semiconductor integrated circuit for eliminating floating body effects in SOI MOSFETs and method of fabricating the same

Method of fabricating a semiconductor device having a shallow source/drain region

Semiconductor device having junction diode and fabricating method therefor

CMOS device with improved performance and method of fabricating the same

Method of forming a pattern in a semiconductor device and method of forming a gate using the same

Method of forming a pattern in a semiconductor device and method of forming a gate using the same

Methods for fabricating reduced floating body effect static random access memory cells

Reduced floating body effect static random access memory cells and methods for fabricating the same

Method of manufacturing a semiconductor device

Method for manufacturing semiconductor device

Method of fabricating MOS transistor having fully silicided gate

SK HYNIX INC

Semiconductor memory with reduced contact margin

Semiconductor device and method for fabricating the same, and microprocessor, processor, system, data storage system and memory system including the semiconductor device

Electronic device

POSCO CO LTD

High-strength hot-rolled steel sheet having excellent bendability and low-temperature and method for manufacturing same

High-strength hot-rolled steel sheet having excellent bendability and low-temperature and method for manufacturing same

YOO ABRAHAM

Shared contact structure, semiconductor device and method of fabricating the semiconductor device

SAMSNUNG ELECTRONICS CO LTD

Alignment mark and method for manufacturing a semiconductor device having the same

RYOU CHOONG-RYUL

Method of forming a pattern in a semiconductor device and method of forming a gate using the same

KYUNGPOOK NAT UNIV IND ACAD

Nitride semiconductor and fabricating method thereof

LEE SANG LEEM

External wall panel unit for saving energy and external wall structure system using the same