P

Inventor

MCSTAY KEVIN

US15 patents
⚠️ This page may combine multiple inventors who share the name “MCSTAY KEVIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

5 patents
US7733109B2Jun 8, 2010

Test structure for resistive open detection using voltage contrast inspection and related methods

IBM92 citations97
US6740920B2May 25, 2004

Vertical MOSFET with horizontally graded channel doping

IBM27 citations92
US6573561B1Jun 3, 2003

Vertical MOSFET with asymmetrically graded channel doping

IBM23 citations92
US7989298B1Aug 2, 2011

Transistor having V-shaped embedded stressor

IBM27 citations90
US6930004B2Aug 16, 2005

Self-aligned drain/channel junction in vertical pass transistor DRAM cell design for device scaling

IBM16 citations83

FRIED DAVID M

2 patents
US8236632B2Aug 7, 2012

FET structures with trench implantation to improve back channel leakage and body resistance

FRIED DAVID M10 citations83
US8809953B2Aug 19, 2014

FET structures with trench implantation to improve back channel leakage and body resistance

FRIED DAVID M6 citations82

INFINEON TECHNOLOGIES AG

2 patents
US6693843B1Feb 17, 2004

Wordline on and off voltage compensation circuit based on the array device threshold voltage

INFINEON TECHNOLOGIES AG14 citations82
US6381182B1Apr 30, 2002

Combined tracking of WLL and VPP low threshold voltage in DRAM array

INFINEON TECHNOLOGIES AG8 citations73

SEMICONDUCTOR COMPONENTS IND LLC

2 patents
US12034025B2Jul 9, 2024

Semiconductor devices with single-photon avalanche diodes and isolation structures

SEMICONDUCTOR COMPONENTS IND LLC2 citations70
US12310139B2May 20, 2025

Semiconductor devices with single-photon avalanche diodes and isolation structures

SEMICONDUCTOR COMPONENTS IND LLC0 citations59

GLOBALFOUNDRIES INC

1 patent
US9437496B1Sep 6, 2016

Merged source drain epitaxy

GLOBALFOUNDRIES INC26 citations94

CHENG KANGGUO

1 patent
US8395217B1Mar 12, 2013

Isolation in CMOSFET devices utilizing buried air bags

CHENG KANGGUO33 citations92

CHOU ANTHONY I

1 patent
US8232603B2Jul 31, 2012

Gated diode structure and method including relaxed liner

CHOU ANTHONY I2 citations62

ERVIN JOSEPH

1 patent
US9484269B2Nov 1, 2016

Structure and method to control bottom corner threshold in an SOI device

ERVIN JOSEPH0 citations51