P

Inventor

O'BRIEN KEVIN P

US80 patents
⚠️ This page may combine multiple inventors who share the name “O'BRIEN KEVIN P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

44 patents
US7018918B2Mar 28, 2006

Method of forming a selectively converted inter-layer dielectric using a porogen material

INTEL CORP76 citations97
US6737365B1May 18, 2004

Forming a porous dielectric layer

INTEL CORP61 citations95
US7294568B2Nov 13, 2007

Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures

INTEL CORP22 citations93
US7238604B2Jul 3, 2007

Forming thin hard mask over air gap or porous dielectric

INTEL CORP42 citations92
US7071126B2Jul 4, 2006

Densifying a relatively porous material

INTEL CORP36 citations92
US6908863B2Jun 21, 2005

Sacrificial dielectric planarization layer

INTEL CORP24 citations92
US6908829B2Jun 21, 2005

Method of forming an air gap intermetal layer dielectric (ILD) by utilizing a dielectric material to bridge underlying metal lines

INTEL CORP34 citations91
US7344972B2Mar 18, 2008

Photosensitive dielectric layer

INTEL CORP16 citations84
US7335587B2Feb 26, 2008

Post polish anneal of atomic layer deposition barrier layers

INTEL CORP13 citations84
US7119019B2Oct 10, 2006

Capping of copper structures in hydrophobic ILD using aqueous electro-less bath

INTEL CORP13 citations84
US6833320B2Dec 21, 2004

Removing sacrificial material by thermal decomposition

INTEL CORP14 citations84
US7973407B2Jul 5, 2011

Three-dimensional stacked substrate arrangements

INTEL CORP12 citations83
US12107060B2Oct 1, 2024

Microelectronic assemblies with inductors in direct bonding regions

INTEL CORP5 citations75
US12062631B2Aug 13, 2024

Microelectronic assemblies with inductors in direct bonding regions

INTEL CORP4 citations74
US7109557B2Sep 19, 2006

Sacrificial dielectric planarization layer

INTEL CORP6 citations74
US7101798B2Sep 5, 2006

Method to modulate etch rate in SLAM

INTEL CORP8 citations74
US10832749B2Nov 10, 2020

Perpendicular magnetic memory with symmetric fixed layers

INTEL CORP5 citations73
US10832847B2Nov 10, 2020

Low stray field magnetic memory

INTEL CORP2 citations73
US10411068B2Sep 10, 2019

Electrical contacts for magnetoresistive random access memory devices

INTEL CORP3 citations73
US10340445B2Jul 2, 2019

PSTTM device with bottom electrode interface material

INTEL CORP5 citations73
US10326075B2Jun 18, 2019

PSTTM device with multi-layered filter stack

INTEL CORP2 citations73
US11404630B2Aug 2, 2022

Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same

INTEL CORP2 citations72
US10559744B2Feb 11, 2020

Texture breaking layer to decouple bottom electrode from PMTJ device

INTEL CORP2 citations71
US10937807B2Mar 2, 2021

Ferroelectric field-effect transistor devices having a top gate and a bottom gate

INTEL CORP3 citations69
US12396254B2Aug 19, 2025

Stacked 2D CMOS with inter metal layers

INTEL CORP1 citations63
US11295884B2Apr 5, 2022

Perpendicular STTM multi-layer insert free layer

INTEL CORP0 citations63
US10522739B2Dec 31, 2019

Perpendicular magnetic memory with reduced switching current

INTEL CORP1 citations63
US10504962B2Dec 10, 2019

Unipolar current switching in perpendicular magnetic tunnel junction (pMTJ) devices through reduced bipolar coercivity

INTEL CORP1 citations63
US10340443B2Jul 2, 2019

Perpendicular magnetic memory with filament conduction path

INTEL CORP1 citations63
US7658975B2Feb 9, 2010

Sealing porous dielectric materials

INTEL CORP2 citations63
US7629252B2Dec 8, 2009

Conformal electroless deposition of barrier layer materials

INTEL CORP5 citations63
US7572732B2Aug 11, 2009

Method to modulate etch rate in SLAM

INTEL CORP2 citations63
US6872654B2Mar 29, 2005

Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric

INTEL CORP4 citations63
US12349442B2Jul 1, 2025

Thin film transistors having semiconductor structures integrated with 2D channel materials

INTEL CORP0 citations62
US12278289B2Apr 15, 2025

TMD inverted nanowire integration

INTEL CORP0 citations62
US11935956B2Mar 19, 2024

TMD inverted nanowire integration

INTEL CORP0 citations62
US11908950B2Feb 20, 2024

Charge-transfer spacers for stacked nanoribbon 2D transistors

INTEL CORP0 citations62
US11031545B2Jun 8, 2021

High stability free layer for perpendicular spin torque transfer memory

INTEL CORP0 citations62
US10868233B2Dec 15, 2020

Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures

INTEL CORP1 citations62
US10418415B2Sep 17, 2019

Interconnect capping process for integration of MRAM devices and the resulting structures

INTEL CORP1 citations62
US10365894B2Jul 30, 2019

Random number generator

INTEL CORP1 citations62
US7550385B2Jun 23, 2009

Amine-free deposition of metal-nitride films

INTEL CORP6 citations62
US12432976B2Sep 30, 2025

Thin film transistors having strain-inducing structures integrated with 2D channel materials

INTEL CORP0 citations61
US12369382B2Jul 22, 2025

Integrated circuit structures with graphene contacts

INTEL CORP0 citations61

BRIEN KEVIN P O

2 patents

ELSHERBINI ADEL A

1 patent

RAMANATHAN SHRIRAM

1 patent

DOYLE BRIAN S

1 patent

JEZEWSKI CHRISTOPHER J

1 patent

Showing the top 50 of 80 patents by PatentIndex Score.