Inventor
O'BRIEN KEVIN P
US80 patents
⚠️ This page may combine multiple inventors who share the name “O'BRIEN KEVIN P”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
44 patentsUS7018918B2Mar 28, 2006
Method of forming a selectively converted inter-layer dielectric using a porogen material
INTEL CORP76 citations97
US6737365B1May 18, 2004
Forming a porous dielectric layer
INTEL CORP61 citations95
US7294568B2Nov 13, 2007
Formation of air gaps in an interconnect structure using a thin permeable hard mask and resulting structures
INTEL CORP22 citations93
US7238604B2Jul 3, 2007
Forming thin hard mask over air gap or porous dielectric
INTEL CORP42 citations92
US7071126B2Jul 4, 2006
Densifying a relatively porous material
INTEL CORP36 citations92
US6908863B2Jun 21, 2005
Sacrificial dielectric planarization layer
INTEL CORP24 citations92
US6908829B2Jun 21, 2005
Method of forming an air gap intermetal layer dielectric (ILD) by utilizing a dielectric material to bridge underlying metal lines
INTEL CORP34 citations91
US7344972B2Mar 18, 2008
Photosensitive dielectric layer
INTEL CORP16 citations84
US7335587B2Feb 26, 2008
Post polish anneal of atomic layer deposition barrier layers
INTEL CORP13 citations84
US7119019B2Oct 10, 2006
Capping of copper structures in hydrophobic ILD using aqueous electro-less bath
INTEL CORP13 citations84
US6833320B2Dec 21, 2004
Removing sacrificial material by thermal decomposition
INTEL CORP14 citations84
US7973407B2Jul 5, 2011
Three-dimensional stacked substrate arrangements
INTEL CORP12 citations83
US12107060B2Oct 1, 2024
Microelectronic assemblies with inductors in direct bonding regions
INTEL CORP5 citations75
US12062631B2Aug 13, 2024
Microelectronic assemblies with inductors in direct bonding regions
INTEL CORP4 citations74
US7109557B2Sep 19, 2006
Sacrificial dielectric planarization layer
INTEL CORP6 citations74
US7101798B2Sep 5, 2006
Method to modulate etch rate in SLAM
INTEL CORP8 citations74
US10832749B2Nov 10, 2020
Perpendicular magnetic memory with symmetric fixed layers
INTEL CORP5 citations73
US10832847B2Nov 10, 2020
Low stray field magnetic memory
INTEL CORP2 citations73
US10411068B2Sep 10, 2019
Electrical contacts for magnetoresistive random access memory devices
INTEL CORP3 citations73
US10340445B2Jul 2, 2019
PSTTM device with bottom electrode interface material
INTEL CORP5 citations73
US10326075B2Jun 18, 2019
PSTTM device with multi-layered filter stack
INTEL CORP2 citations73
US11404630B2Aug 2, 2022
Perpendicular spin transfer torque memory (pSTTM) devices with enhanced stability and method to form same
INTEL CORP2 citations72
US10559744B2Feb 11, 2020
Texture breaking layer to decouple bottom electrode from PMTJ device
INTEL CORP2 citations71
US10937807B2Mar 2, 2021
Ferroelectric field-effect transistor devices having a top gate and a bottom gate
INTEL CORP3 citations69
US12396254B2Aug 19, 2025
Stacked 2D CMOS with inter metal layers
INTEL CORP1 citations63
US11295884B2Apr 5, 2022
Perpendicular STTM multi-layer insert free layer
INTEL CORP0 citations63
US10522739B2Dec 31, 2019
Perpendicular magnetic memory with reduced switching current
INTEL CORP1 citations63
US10504962B2Dec 10, 2019
Unipolar current switching in perpendicular magnetic tunnel junction (pMTJ) devices through reduced bipolar coercivity
INTEL CORP1 citations63
US10340443B2Jul 2, 2019
Perpendicular magnetic memory with filament conduction path
INTEL CORP1 citations63
US7658975B2Feb 9, 2010
Sealing porous dielectric materials
INTEL CORP2 citations63
US7629252B2Dec 8, 2009
Conformal electroless deposition of barrier layer materials
INTEL CORP5 citations63
US7572732B2Aug 11, 2009
Method to modulate etch rate in SLAM
INTEL CORP2 citations63
US6872654B2Mar 29, 2005
Method of fabricating a bismaleimide (BMI) ASA sacrifical material for an integrated circuit air gap dielectric
INTEL CORP4 citations63
US12349442B2Jul 1, 2025
Thin film transistors having semiconductor structures integrated with 2D channel materials
INTEL CORP0 citations62
US12278289B2Apr 15, 2025
TMD inverted nanowire integration
INTEL CORP0 citations62
US11935956B2Mar 19, 2024
TMD inverted nanowire integration
INTEL CORP0 citations62
US11908950B2Feb 20, 2024
Charge-transfer spacers for stacked nanoribbon 2D transistors
INTEL CORP0 citations62
US11031545B2Jun 8, 2021
High stability free layer for perpendicular spin torque transfer memory
INTEL CORP0 citations62
US10868233B2Dec 15, 2020
Approaches for strain engineering of perpendicular magnetic tunnel junctions (pMTJs) and the resulting structures
INTEL CORP1 citations62
US10418415B2Sep 17, 2019
Interconnect capping process for integration of MRAM devices and the resulting structures
INTEL CORP1 citations62
US10365894B2Jul 30, 2019
Random number generator
INTEL CORP1 citations62
US7550385B2Jun 23, 2009
Amine-free deposition of metal-nitride films
INTEL CORP6 citations62
US12432976B2Sep 30, 2025
Thin film transistors having strain-inducing structures integrated with 2D channel materials
INTEL CORP0 citations61
US12369382B2Jul 22, 2025
Integrated circuit structures with graphene contacts
INTEL CORP0 citations61
BRIEN KEVIN P O
2 patentsELSHERBINI ADEL A
1 patentRAMANATHAN SHRIRAM
1 patentDOYLE BRIAN S
1 patentJEZEWSKI CHRISTOPHER J
1 patentShowing the top 50 of 80 patents by PatentIndex Score.