Inventor
QU ZHIJUN
US15 patents
⚠️ This page may combine multiple inventors who share the name “QU ZHIJUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INT RECTIFIER CORP
5 patentsUS6621122B2Sep 16, 2003
Termination structure for superjunction device
INT RECTIFIER CORP62 citations95
US6900523B2May 31, 2005
Termination structure for MOSgated power devices
INT RECTIFIER CORP13 citations83
US7268395B2Sep 11, 2007
Deep trench super switch device
INT RECTIFIER CORP8 citations72
US7482285B2Jan 27, 2009
Dual epitaxial layer for high voltage vertical conduction power MOSFET devices
INT RECTIFIER CORP3 citations61
US6919241B2Jul 19, 2005
Superjunction device and process for its manufacture
INT RECTIFIER CORP6 citations61
D3 Semiconductor LLC
5 patentsUS10074735B2Sep 11, 2018
Surface devices within a vertical power device
D3 Semiconductor LLC2 citations72
US9755058B2Sep 5, 2017
Surface devices within a vertical power device
D3 Semiconductor LLC4 citations72
US9806186B2Oct 31, 2017
Termination region architecture for vertical power transistors
D3 Semiconductor LLC4 citations71
US10580884B2Mar 3, 2020
Super junction MOS bipolar transistor having drain gaps
D3 Semiconductor LLC1 citations61
US10134890B2Nov 20, 2018
Termination region architecture for vertical power transistors
D3 Semiconductor LLC0 citations50
HUAWEI TECH CO LTD
3 patentsUS12114425B2Oct 8, 2024
Cable assembly, signal transmission structure, and electronic device
HUAWEI TECH CO LTD0 citations46
US11387226B2Jul 12, 2022
Chip power supply system, chip, PCB, and computer device
HUAWEI TECH CO LTD0 citations42
US7756147B2Jul 13, 2010
VLAN-based data packet transmission and ethernet bridge device
HUAWEI TECH CO LTD0 citations37