Inventor
GONG JENG
TW24 patents
⚠️ This page may combine multiple inventors who share the name “GONG JENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
10 patentsUS9331143B1May 3, 2016
Semiconductor structure having field plates over resurf regions in semiconductor substrate
MACRONIX INT CO LTD3 citations73
US9397205B1Jul 19, 2016
Semiconductor device
MACRONIX INT CO LTD2 citations62
US9455339B2Sep 27, 2016
High voltage device and method for manufacturing the same
MACRONIX INT CO LTD2 citations60
US8350304B2Jan 8, 2013
Junction-field-effect-transistor devices and methods of manufacturing the same
MACRONIX INT CO LTD2 citations60
US9153574B2Oct 6, 2015
Semiconductor device and method of fabricating the same
MACRONIX INT CO LTD0 citations52
US9041142B2May 26, 2015
Semiconductor device and operating method for the same
MACRONIX INT CO LTD1 citations52
US9306043B2Apr 5, 2016
Bipolar junction transistor and operating and manufacturing method for the same
MACRONIX INT CO LTD0 citations51
US8963238B2Feb 24, 2015
Double diffused drain metal-oxide-semiconductor devices with floating poly thereon and methods of manufacturing the same
MACRONIX INT CO LTD0 citations51
US8557653B2Oct 15, 2013
Junction-field-effect-transistor devices and methods of manufacturing the same
MACRONIX INT CO LTD0 citations50
US8952744B1Feb 10, 2015
Semiconductor device and operating method for the same
MACRONIX INT CO LTD0 citations41
TAIWAN SEMICONDUCTOR MFG
3 patentsUS6468870B1Oct 22, 2002
Method of fabricating a LDMOS transistor
TAIWAN SEMICONDUCTOR MFG37 citations92
US6734493B2May 11, 2004
Lateral double diffused metal oxide semiconductor (LDMOS) device with aligned buried layer isolation layer
TAIWAN SEMICONDUCTOR MFG28 citations86
US7816744B2Oct 19, 2010
Gate electrodes of HVMOS devices having non-uniform doping concentrations
TAIWAN SEMICONDUCTOR MFG7 citations74