Inventor
WU SHIEN-YANG
TW43 patents
⚠️ This page may combine multiple inventors who share the name “WU SHIEN-YANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG
21 patentsUS6580145B2Jun 17, 2003
Low programming voltage anti-fuse structure
TAIWAN SEMICONDUCTOR MFG56 citations96
US6323097B1Nov 27, 2001
Electrical overlay/spacing monitor method using a ladder resistor
TAIWAN SEMICONDUCTOR MFG61 citations94
US7279430B2Oct 9, 2007
Process for fabricating a strained channel MOSFET device
TAIWAN SEMICONDUCTOR MFG23 citations92
US6956277B1Oct 18, 2005
Diode junction poly fuse
TAIWAN SEMICONDUCTOR MFG19 citations92
US6806107B1Oct 19, 2004
Electrical fuse element test structure and method
TAIWAN SEMICONDUCTOR MFG30 citations92
US6885214B1Apr 26, 2005
Method for measuring capacitance-voltage curves for transistors
TAIWAN SEMICONDUCTOR MFG24 citations91
US7952142B2May 31, 2011
Variable width offset spacers for mixed signal and system on chip devices
TAIWAN SEMICONDUCTOR MFG13 citations84
US7332791B2Feb 19, 2008
Electrically programmable polysilicon fuse with multiple level resistance and programming
TAIWAN SEMICONDUCTOR MFG10 citations84
US7078723B2Jul 18, 2006
Microelectronic device with depth adjustable sill
TAIWAN SEMICONDUCTOR MFG17 citations84
US9093566B2Jul 28, 2015
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG5 citations83
US7109564B2Sep 19, 2006
Low power fuse structure and method of making the same
TAIWAN SEMICONDUCTOR MFG13 citations83
US7782073B2Aug 24, 2010
High accuracy and universal on-chip switch matrix testline
TAIWAN SEMICONDUCTOR MFG11 citations81
US7898028B2Mar 1, 2011
Process for fabricating a strained channel MOSFET device
TAIWAN SEMICONDUCTOR MFG6 citations74
US7456066B2Nov 25, 2008
Variable width offset spacers for mixed signal and system on chip devices
TAIWAN SEMICONDUCTOR MFG8 citations74
US6970394B2Nov 29, 2005
Programming method for electrical fuse cell and circuit thereof
TAIWAN SEMICONDUCTOR MFG9 citations74
US9099467B2Aug 4, 2015
E-fuse structure design in electrical programmable redundancy for embedded memory circuit
TAIWAN SEMICONDUCTOR MFG2 citations63
US7271431B2Sep 18, 2007
Integrated circuit structure and method of fabrication
TAIWAN SEMICONDUCTOR MFG2 citations63
US9293378B2Mar 22, 2016
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG1 citations62
US6828198B2Dec 7, 2004
System-on-chip (SOC) solutions with multiple devices by multiple poly gate trimming process
TAIWAN SEMICONDUCTOR MFG4 citations62
US7892895B2Feb 22, 2011
Diode junction poly fuse
TAIWAN SEMICONDUCTOR MFG0 citations51
US7678655B2Mar 16, 2010
Spacer layer etch method providing enhanced microelectronic device performance
TAIWAN SEMICONDUCTOR MFG1 citations51
TAIWAN SEMICONDUCTOR MFG CO LTD
18 patentsUS11302692B2Apr 12, 2022
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations86
US11101359B2Aug 24, 2021
Gate-all-around (GAA) method and devices
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US10014066B2Jul 3, 2018
Anti-fuse cell structure including reading and programming devices with different gate dielectric thickness
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US11742349B2Aug 29, 2023
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12051695B2Jul 30, 2024
Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US10347646B2Jul 9, 2019
Anti-fuse cell structure including reading and programming devices with different gate dielectric thickness
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations63
US9419087B2Aug 16, 2016
Bipolar junction transistor formed on fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12057485B2Aug 6, 2024
Gate-all-around (GAA) method and devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12033939B2Jul 9, 2024
Electrical fuse structure and method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11410925B2Aug 9, 2022
Electrical fuse structure and method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10521537B2Dec 31, 2019
Method and system of generating layout
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US9741658B2Aug 22, 2017
Electrical fuse structure and method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US9780003B2Oct 3, 2017
Bipolar junction transistor formed on fin structures
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9881837B2Jan 30, 2018
Fin-like field effect transistor (FinFET) based, metal-semiconductor alloy fuse device and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9755075B2Sep 5, 2017
High efficiency FinFET diode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US11309244B2Apr 19, 2022
Electrical fuse structure and method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
US9865536B2Jan 9, 2018
Electrical fuse structure and method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations50
US9892221B2Feb 13, 2018
Method and system of generating a layout including a fuse layout pattern
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations48