P

Inventor

LAVOIE ADRIEN R

US28 patents
⚠️ This page may combine multiple inventors who share the name “LAVOIE ADRIEN R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INTEL CORP

19 patents
US7682891B2Mar 23, 2010

Tunable gate electrode work function material for transistor applications

INTEL CORP19 citations92
US7687911B2Mar 30, 2010

Silicon-alloy based barrier layers for integrated circuit metal interconnects

INTEL CORP8 citations84
US7605073B2Oct 20, 2009

Sealants for metal interconnect protection in microelectronic devices having air gap interconnect structures

INTEL CORP9 citations83
US7354849B2Apr 8, 2008

Catalytically enhanced atomic layer deposition process

INTEL CORP13 citations83
US7365011B2Apr 29, 2008

Catalytic nucleation monolayer for metal seed layers

INTEL CORP12 citations80
US8013401B2Sep 6, 2011

Selectively depositing aluminum in a replacement metal gate process

INTEL CORP4 citations63
US7625817B2Dec 1, 2009

Method of fabricating a carbon nanotube interconnect structures

INTEL CORP4 citations63
US7858525B2Dec 28, 2010

Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill

INTEL CORP5 citations62
US7749906B2Jul 6, 2010

Using unstable nitrides to form semiconductor structures

INTEL CORP3 citations62
US7550385B2Jun 23, 2009

Amine-free deposition of metal-nitride films

INTEL CORP6 citations62
US7476615B2Jan 13, 2009

Deposition process for iodine-doped ruthenium barrier layers

INTEL CORP3 citations62
US7524765B2Apr 28, 2009

Direct tailoring of the composition and density of ALD films

INTEL CORP2 citations57
US7799679B2Sep 21, 2010

Liquid phase molecular self-assembly for barrier deposition and structures formed thereby

INTEL CORP0 citations52
US8344352B2Jan 1, 2013

Using unstable nitrides to form semiconductor structures

INTEL CORP0 citations51
US8012878B2Sep 6, 2011

Atomic layer volatilization process for metal layers

INTEL CORP0 citations51
US7982204B2Jul 19, 2011

Using unstable nitrides to form semiconductor structures

INTEL CORP0 citations51
US7842983B2Nov 30, 2010

Boundaries with elevated deuterium levels

INTEL CORP0 citations51
US7759241B2Jul 20, 2010

Group II element alloys for protecting metal interconnects

INTEL CORP1 citations51
US7704895B2Apr 27, 2010

Deposition method for high-k dielectric materials

INTEL CORP1 citations51

LAVOIE ADRIEN R

6 patents

DOMINGUEZ JUAN E

1 patent

ADVANCED TECH MATERIALS

1 patent

BUDREVICH AARON A

1 patent