Inventor
RAMACHANDRARAO VIJAYAKUMAR S
US19 patents
Patents
19 patentsUS7005390B2Feb 28, 2006
Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
INTEL CORP52 citations96
US6812132B2Nov 2, 2004
Filling small dimension vias using supercritical carbon dioxide
INTEL CORP40 citations95
US7238604B2Jul 3, 2007
Forming thin hard mask over air gap or porous dielectric
INTEL CORP42 citations92
US7022655B2Apr 4, 2006
Highly polar cleans for removal of residues from semiconductor structures
INTEL CORP21 citations92
US6974762B2Dec 13, 2005
Adhesion of carbon doped oxides by silanization
INTEL CORP19 citations92
US6624127B1Sep 23, 2003
Highly polar cleans for removal of residues from semiconductor structures
INTEL CORP28 citations92
US7374867B2May 20, 2008
Enhancing photoresist performance using electric fields
INTEL CORP21 citations90
US7335586B2Feb 26, 2008
Sealing porous dielectric material using plasma-induced surface polymerization
INTEL CORP12 citations84
US7220668B2May 22, 2007
Method of patterning a porous dielectric material
INTEL CORP11 citations84
US7179757B2Feb 20, 2007
Replenishment of surface carbon and surface passivation of low-k porous silicon-based dielectric materials
INTEL CORP11 citations84
US7605073B2Oct 20, 2009
Sealants for metal interconnect protection in microelectronic devices having air gap interconnect structures
INTEL CORP9 citations83
US6620741B1Sep 16, 2003
Method for controlling etch bias of carbon doped oxide films
INTEL CORP12 citations74
US7038324B2May 2, 2006
Wafer stacking using interconnect structures of substantially uniform height
INTEL CORP4 citations63
US7977228B2Jul 12, 2011
Methods for the formation of interconnects separated by air gaps
INTEL CORP5 citations62
US7233068B2Jun 19, 2007
Filling small dimension vias using supercritical carbon dioxide
INTEL CORP2 citations62
US7268015B2Sep 11, 2007
Method for wafer stacking using copper structures of substantially uniform height
INTEL CORP1 citations52
US7101443B2Sep 5, 2006
Supercritical carbon dioxide-based cleaning of metal lines
INTEL CORP1 citations52
US8017568B2Sep 13, 2011
Cleaning residues from semiconductor structures
INTEL CORP1 citations50
US7018938B2Mar 28, 2006
Controlled use of photochemically susceptible chemistries for etching, cleaning and surface conditioning
INTEL CORP0 citations45