Inventor

OKUMURA KOICHIRO

JP14 patents

⚠️ This page may combine multiple inventors who share the name “OKUMURA KOICHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

12 patents

US5892260AApr 6, 1999

SOI-type semiconductor device with variable threshold voltages

NEC CORP116 citations97

US5814899ASep 29, 1998

SOI-type semiconductor device with variable threshold voltages

NEC CORP69 citations95

US5631478AMay 20, 1997

Semiconductor integrated circuits with specific pitch multilevel interconnections

NEC CORP80 citations95

US4680488AJul 14, 1987

MOSFET-type driving circuit with capacitive bootstrapping for driving a large capacitive load at high speed

NEC CORP26 citations91

US5593923AJan 14, 1997

Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal

NEC CORP20 citations90

US5543744AAug 6, 1996

Semiconductor memory device including non-volatile transistor for storing data in a bistable circuit

NEC CORP19 citations73

US4587446AMay 6, 1986

Field effect transistor output circuit operable by a reduced amount of current

NEC CORP11 citations73

US5680069AOct 21, 1997

Driver/receiver circuit including receiver circuit with p-channel MOSFET and N-channel MOSFET

NEC CORP4 citations62

US5247214ASep 21, 1993

Bi-cmos out buffer circuit for cmos logic

NEC CORP2 citations62

NIPPON ELECTRIC CO

2 patents

US4481521ANov 6, 1984

Insulated gate field effect transistor provided with a protective device for a gate insulating film

NIPPON ELECTRIC CO30 citations92

US4295061AOct 13, 1981

Latch circuit

NIPPON ELECTRIC CO2 citations56

OKUMURA KOICHIRO

NEC CORP

SOI-type semiconductor device with variable threshold voltages

SOI-type semiconductor device with variable threshold voltages

Semiconductor integrated circuits with specific pitch multilevel interconnections

MOSFET-type driving circuit with capacitive bootstrapping for driving a large capacitive load at high speed

Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal

Driver/receiver circuit for reducing transmission delay

Silicon on insulator type semiconductor device

Bicmos logic circuit

Semiconductor memory device including non-volatile transistor for storing data in a bistable circuit

Field effect transistor output circuit operable by a reduced amount of current

Driver/receiver circuit including receiver circuit with p-channel MOSFET and N-channel MOSFET

Bi-cmos out buffer circuit for cmos logic

NIPPON ELECTRIC CO

Insulated gate field effect transistor provided with a protective device for a gate insulating film

Latch circuit