Inventor
LEE YEONG TAEK
KR105 patents
⚠️ This page may combine multiple inventors who share the name “LEE YEONG TAEK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
45 patentsUS6870766B2Mar 22, 2005
Multi-level flash memory with temperature compensation
SAMSUNG ELECTRONICS CO LTD211 citations99
US9472282B2Oct 18, 2016
Resistive memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD69 citations98
US7542350B2Jun 2, 2009
Methods of restoring data in flash memory devices and related flash memory device memory systems
SAMSUNG ELECTRONICS CO LTD61 citations98
US7035144B2Apr 25, 2006
Flash memory device having multi-level cell and reading and programming method thereof
SAMSUNG ELECTRONICS CO LTD68 citations98
US6735116B2May 11, 2004
NAND-type flash memory device with multi-page program, multi-page read, multi-block erase operations
SAMSUNG ELECTRONICS CO LTD86 citations98
US6469933B2Oct 22, 2002
Flash memory device capable of preventing program disturb and method for programming the same
SAMSUNG ELECTRONICS CO LTD121 citations97
US7254064B2Aug 7, 2007
Flash memory device having multi-level cell and reading and programming method thereof
SAMSUNG ELECTRONICS CO LTD39 citations96
US6813187B2Nov 2, 2004
Bit line setup and discharge circuit for programming non-volatile memory
SAMSUNG ELECTRONICS CO LTD60 citations96
US6751124B2Jun 15, 2004
Bit line setup and discharge circuit for programming non-volatile memory
SAMSUNG ELECTRONICS CO LTD48 citations96
US7924629B2Apr 12, 2011
Three-dimensional memory device and programming method
SAMSUNG ELECTRONICS CO LTD48 citations94
US7675783B2Mar 9, 2010
Nonvolatile memory device and driving method thereof
SAMSUNG ELECTRONICS CO LTD47 citations94
US5404330AApr 4, 1995
Word line boosting circuit and control circuit therefor in a semiconductor integrated circuit
SAMSUNG ELECTRONICS CO LTD71 citations94
US7940564B2May 10, 2011
Three-dimensional memory device with multi-plane architecture
SAMSUNG ELECTRONICS CO LTD28 citations93
US7715231B2May 11, 2010
Flash memory device having multi-level cell and reading and programming method thereof
SAMSUNG ELECTRONICS CO LTD11 citations93
US7692970B2Apr 6, 2010
Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same
SAMSUNG ELECTRONICS CO LTD37 citations93
US7566927B2Jul 28, 2009
Flash memory device
SAMSUNG ELECTRONICS CO LTD36 citations93
US7567452B2Jul 28, 2009
Multi-level dynamic memory device having open bit line structure and method of driving the same
SAMSUNG ELECTRONICS CO LTD24 citations93
US7551480B2Jun 23, 2009
Multi-bit flash memory device and memory cell array
SAMSUNG ELECTRONICS CO LTD13 citations93
US7508732B2Mar 24, 2009
Multi-bit flash memory device including memory cells storing different numbers of bits
SAMSUNG ELECTRONICS CO LTD29 citations93
US7453729B2Nov 18, 2008
Bit line setup and discharge circuit for programming non-volatile memory
SAMSUNG ELECTRONICS CO LTD25 citations93
US7359245B2Apr 15, 2008
Flash memory device having multi-level cell and reading and programming method thereof
SAMSUNG ELECTRONICS CO LTD24 citations93
US6611460B2Aug 26, 2003
Nonvolatile semiconductor memory device and programming method thereof
SAMSUNG ELECTRONICS CO LTD26 citations93
US5504715AApr 2, 1996
Word line loading compensating circuit of semiconductor memory device
SAMSUNG ELECTRONICS CO LTD22 citations93
US9171617B1Oct 27, 2015
Resistive memory device and method programming same
SAMSUNG ELECTRONICS CO LTD26 citations92
US7940578B2May 10, 2011
Flash memory device having row decoders sharing single high voltage level shifter, system including the same, and associated methods
SAMSUNG ELECTRONICS CO LTD30 citations92
US7843733B2Nov 30, 2010
Flash memory devices having three dimensional stack structures and methods of driving same
SAMSUNG ELECTRONICS CO LTD29 citations92
US7173861B2Feb 6, 2007
Nonvolatile memory device for preventing bitline high voltage from discharge
SAMSUNG ELECTRONICS CO LTD21 citations92
US6965964B2Nov 15, 2005
Nand flash memory device
SAMSUNG ELECTRONICS CO LTD30 citations92
US6594178B2Jul 15, 2003
Method for optimizing distribution profile of cell threshold voltages in NAND-type flash memory device
SAMSUNG ELECTRONICS CO LTD48 citations92
US6473344B2Oct 29, 2002
Semiconductor memory device capable of outputting a wordline voltage via an external pin
SAMSUNG ELECTRONICS CO LTD27 citations92
US9646685B2May 9, 2017
Resistive memory device, resistive memory, and operating method of the resistive memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US9514813B2Dec 6, 2016
Resistive memory device, resistive memory system, and operating method thereof
SAMSUNG ELECTRONICS CO LTD7 citations84
US9449686B2Sep 20, 2016
Resistive memory device, resistive memory system and method of operating the resistive memory device
SAMSUNG ELECTRONICS CO LTD8 citations84
US9269430B1Feb 23, 2016
Memory device having cross point array structure, memory system, and method of operating memory device
SAMSUNG ELECTRONICS CO LTD7 citations84
US9183932B1Nov 10, 2015
Resistive memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US8014221B2Sep 6, 2011
Memory devices including floating body transistor capacitorless memory cells and related methods
SAMSUNG ELECTRONICS CO LTD10 citations84
US8004898B2Aug 23, 2011
Nonvolatile memory device, program method thereof, and memory system including the same
SAMSUNG ELECTRONICS CO LTD10 citations84
US7986560B2Jul 26, 2011
Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same
SAMSUNG ELECTRONICS CO LTD15 citations84
US7911835B2Mar 22, 2011
Programming and reading five bits of data in two non-volatile memory cells
SAMSUNG ELECTRONICS CO LTD12 citations84
US7773427B2Aug 10, 2010
Non-volatile memory device and method of operating
SAMSUNG ELECTRONICS CO LTD10 citations84
US7672166B2Mar 2, 2010
Method of programming in a non-volatile memory device and non-volatile memory device for performing the same
SAMSUNG ELECTRONICS CO LTD17 citations84
US7535761B2May 19, 2009
Flash memory device capable of preventing coupling effect and program method thereof
SAMSUNG ELECTRONICS CO LTD15 citations84
US7518909B2Apr 14, 2009
Non-volatile memory device adapted to reduce coupling effect between storage elements and related methods
SAMSUNG ELECTRONICS CO LTD8 citations84
US7489544B2Feb 10, 2009
Flash memory device having multi-level cell and reading and programming method thereof
SAMSUNG ELECTRONICS CO LTD9 citations84
US7388798B2Jun 17, 2008
Semiconductor memory device including memory cell without capacitor
SAMSUNG ELECTRONICS CO LTD9 citations84
SONG KI-WHAN
1 patentYOON CHI-WEON
1 patentKIM HO-JUNG
1 patentPARK KI TAE
1 patentPARK KI-TAE
1 patentShowing the top 50 of 105 patents by PatentIndex Score.