Inventor
ROGGENBAUER TODD C
US18 patents
⚠️ This page may combine multiple inventors who share the name “ROGGENBAUER TODD C”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FREESCALE SEMICONDUCTOR INC
14 patentsUS7851889B2Dec 14, 2010
MOSFET device including a source with alternating P-type and N-type regions
FREESCALE SEMICONDUCTOR INC16 citations84
US7851857B2Dec 14, 2010
Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applications
FREESCALE SEMICONDUCTOR INC10 citations84
US7777257B2Aug 17, 2010
Bipolar Schottky diode and method
FREESCALE SEMICONDUCTOR INC11 citations84
US7732274B2Jun 8, 2010
High voltage deep trench capacitor
FREESCALE SEMICONDUCTOR INC9 citations84
US7723204B2May 25, 2010
Semiconductor device with a multi-plate isolation structure
FREESCALE SEMICONDUCTOR INC11 citations84
US7511319B2Mar 31, 2009
Methods and apparatus for a stepped-drift MOSFET
FREESCALE SEMICONDUCTOR INC9 citations84
US7439584B2Oct 21, 2008
Structure and method for RESURF LDMOSFET with a current diverter
FREESCALE SEMICONDUCTOR INC18 citations84
US7550804B2Jun 23, 2009
Semiconductor device and method for forming the same
FREESCALE SEMICONDUCTOR INC7 citations74
US7405128B1Jul 29, 2008
Dotted channel MOSFET and method
FREESCALE SEMICONDUCTOR INC8 citations74
US6933546B2Aug 23, 2005
Semiconductor component
FREESCALE SEMICONDUCTOR INC11 citations74
US7436025B2Oct 14, 2008
Termination structures for super junction devices
FREESCALE SEMICONDUCTOR INC4 citations63
US7309638B2Dec 18, 2007
Method of manufacturing a semiconductor component
FREESCALE SEMICONDUCTOR INC4 citations63
US7820519B2Oct 26, 2010
Process of forming an electronic device including a conductive structure extending through a buried insulating layer
FREESCALE SEMICONDUCTOR INC5 citations59
US7763937B2Jul 27, 2010
Variable resurf semiconductor device and method
FREESCALE SEMICONDUCTOR INC0 citations42