Inventor
AHN HOKYUN
KR19 patents
⚠️ This page may combine multiple inventors who share the name “AHN HOKYUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
KOREA ELECTRONICS TELECOMM
8 patentsUS9136396B2Sep 15, 2015
Semiconductor device and method of manufacturing the same
KOREA ELECTRONICS TELECOMM8 citations83
US8901608B2Dec 2, 2014
Transistor and method of fabricating the same
KOREA ELECTRONICS TELECOMM4 citations73
US6979871B2Dec 27, 2005
Semiconductor device having T-shaped gate electrode and method of manufacturing the same
KOREA ELECTRONICS TELECOMM9 citations71
US6933543B2Aug 23, 2005
Compound semiconductor high frequency switch device
KOREA ELECTRONICS TELECOMM8 citations71
US9159612B2Oct 13, 2015
Semiconductor device and method of fabricating the same
KOREA ELECTRONICS TELECOMM2 citations62
US8053345B2Nov 8, 2011
Method for fabricating field effect transistor using a compound semiconductor
KOREA ELECTRONICS TELECOMM3 citations62
US8952422B2Feb 10, 2015
Transistor and method of fabricating the same
KOREA ELECTRONICS TELECOMM1 citations52
US8941231B2Jan 27, 2015
Electronic chip and method of fabricating the same
KOREA ELECTRONICS TELECOMM1 citations51
ELECTRONICS & TELECOMMUNICATIONS RES INST
5 patentsUS9634112B2Apr 25, 2017
Field effect transistor and method of fabricating the same
ELECTRONICS & TELECOMMUNICATIONS RES INST2 citations73
US10256811B2Apr 9, 2019
Cascode switch circuit including level shifter
ELECTRONICS & TELECOMMUNICATIONS RES INST2 citations70
US10608102B2Mar 31, 2020
Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same
ELECTRONICS & TELECOMMUNICATIONS RES INST1 citations60
US11916140B2Feb 27, 2024
Compound semiconductor device
ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations56
US9490214B2Nov 8, 2016
Semiconductor device and method of fabricating the same
ELECTRONICS & TELECOMMUNICATIONS RES INST0 citations52