Inventor
KARASAWA HAJIME
JP24 patents
⚠️ This page may combine multiple inventors who share the name “KARASAWA HAJIME”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
HITACHI INT ELECTRIC INC
15 patentsUS10026607B2Jul 17, 2018
Substrate processing apparatus for forming film including at least two different elements
HITACHI INT ELECTRIC INC8 citations92
US9312123B2Apr 12, 2016
Method of manufacturing semiconductor device and substrate processing apparatus
HITACHI INT ELECTRIC INC6 citations92
US9384972B2Jul 5, 2016
Method of manufacturing semiconductor device by forming a film on a substrate
HITACHI INT ELECTRIC INC5 citations84
US9385013B2Jul 5, 2016
Method and apparatus of manufacturing a semiconductor device by forming a film on a substrate
HITACHI INT ELECTRIC INC5 citations84
US9384971B2Jul 5, 2016
Method of manufacturing semiconductor device by forming a film on a substrate
HITACHI INT ELECTRIC INC5 citations84
US9384968B2Jul 5, 2016
Method of manufacturing a semiconductor device by forming a film on a substrate
HITACHI INT ELECTRIC INC5 citations84
US9330904B2May 3, 2016
Method of manufacturing semiconductor device and substrate processing apparatus
HITACHI INT ELECTRIC INC5 citations84
US9384969B2Jul 5, 2016
Method of manufacturing semiconductor device by forming a film on a substrate
HITACHI INT ELECTRIC INC2 citations74
US9384966B2Jul 5, 2016
Method of manufacturing a semiconductor device by forming a film on a substrate
HITACHI INT ELECTRIC INC2 citations74
US9384967B2Jul 5, 2016
Method of manufacturing a semiconductor device by forming a film on a substrate
HITACHI INT ELECTRIC INC2 citations74
US9384970B2Jul 5, 2016
Method of manufacturing semiconductor device by forming a film on a substrate
HITACHI INT ELECTRIC INC2 citations74
US10199219B2Feb 5, 2019
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations51
US6821871B2Nov 23, 2004
Method for manufacturing semiconductor device, substrate treatment method, and semiconductor manufacturing apparatus
HITACHI INT ELECTRIC INC1 citations51
US10720324B2Jul 21, 2020
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
HITACHI INT ELECTRIC INC0 citations42
US10032630B1Jul 24, 2018
Method of manufacturing semiconductor device
HITACHI INT ELECTRIC INC0 citations42
HITACHI-KOKUSAI ELECTRIC INC
4 patentsUS9443720B2Sep 13, 2016
Method of manufacturing semiconductor device for forming film including at least two different elements
HITACHI-KOKUSAI ELECTRIC INC6 citations92
US9487861B2Nov 8, 2016
Substrate processing apparatus capable of forming films including at least two different elements
HITACHI-KOKUSAI ELECTRIC INC4 citations83
US9478417B2Oct 25, 2016
Method of manufacturing semiconductor device for forming film including at least two different elements
HITACHI-KOKUSAI ELECTRIC INC4 citations83
US9443719B2Sep 13, 2016
Method of manufacturing semiconductor device for forming film including at least two different elements
HITACHI-KOKUSAI ELECTRIC INC4 citations83
TAKASAWA YUSHIN
2 patentsUS9318316B2Apr 19, 2016
Method of manufacturing semiconductor device, method of processing substrate and substrate processing apparatus for forming thin film containing at least two different elements
TAKASAWA YUSHIN7 citations91
US8409988B2Apr 2, 2013
Method of manufacturing semiconductor device and substrate processing apparatus
TAKASAWA YUSHIN4 citations61