Inventor
HSIEH JUNG-YU
TW23 patents
⚠️ This page may combine multiple inventors who share the name “HSIEH JUNG-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
14 patentsUS7450423B2Nov 11, 2008
Methods of operating non-volatile memory cells having an oxide/nitride multilayer insulating structure
MACRONIX INT CO LTD278 citations98
US6638879B2Oct 28, 2003
Method for forming nitride spacer by using atomic layer deposition
MACRONIX INT CO LTD108 citations98
US8026136B2Sep 27, 2011
Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memory
MACRONIX INT CO LTD7 citations83
US7118968B2Oct 10, 2006
Method for manufacturing interpoly dielectric
MACRONIX INT CO LTD7 citations73
US6777764B2Aug 17, 2004
ONO interpoly dielectric for flash memory cells and method for fabricating the same using a single wafer low temperature deposition process
MACRONIX INT CO LTD10 citations73
US7939432B2May 10, 2011
Method of improving intrinsic gettering ability of wafer
MACRONIX INT CO LTD6 citations71
US7763935B2Jul 27, 2010
ONO formation of semiconductor memory device and method of fabricating the same
MACRONIX INT CO LTD3 citations62
US7704865B2Apr 27, 2010
Methods of forming charge-trapping dielectric layers for semiconductor memory devices
MACRONIX INT CO LTD2 citations62
US7521321B2Apr 21, 2009
Method of fabricating a non-volatile semiconductor memory device
MACRONIX INT CO LTD2 citations62
US7863132B2Jan 4, 2011
Method for fabricating a charge trapping memory device
MACRONIX INT CO LTD0 citations51
US6822284B2Nov 23, 2004
ONO dielectric for memory cells
MACRONIX INT CO LTD1 citations51
US6511907B1Jan 28, 2003
Method for forming a low loss dielectric layer in the tungsten chemical mechanic grinding process
MACRONIX INT CO LTD1 citations51
US7778072B2Aug 17, 2010
Method for fabricating charge-trapping memory
MACRONIX INT CO LTD0 citations50
US8022466B2Sep 20, 2011
Non-volatile memory cells having a polysilicon-containing, multi-layer insulating structure, memory arrays including the same and methods of operating the same
MACRONIX INT CO LTD0 citations40
GLOBALFOUNDRIES INC
4 patentsUS8969205B2Mar 3, 2015
Double patterning via triangular shaped sidewall spacers
GLOBALFOUNDRIES INC2 citations62
US9368453B2Jun 14, 2016
Overlay mark dependent dummy fill to mitigate gate height variation
GLOBALFOUNDRIES INC1 citations50
US9252061B2Feb 2, 2016
Overlay mark dependent dummy fill to mitigate gate height variation
GLOBALFOUNDRIES INC0 citations50
US10816483B2Oct 27, 2020
Double pass diluted ultraviolet reticle inspection
GLOBALFOUNDRIES INC0 citations41