Inventor
OSSIPOV VIATCHESLAV V
US3 patents
Patents
3 patentsUS6577058B2Jun 10, 2003
Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base
HEWLETT PACKARD DEVELOPMENT CO11 citations72
US6809388B2Oct 26, 2004
Magnetic sensor based on efficient spin injection into semiconductors
HEWLETT PACKARD DEVELOPMENT CO6 citations71
US6847045B2Jan 25, 2005
High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
HEWLETT PACKARD DEVELOPMENT CO2 citations61