Inventor

DIMITROV DIMITAR V

US110 patents

⚠️ This page may combine multiple inventors who share the name “DIMITROV DIMITAR V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DIMITROV DIMITAR V

SEAGATE TECHNOLOGY LLC

Stram with self-reference read scheme

Spin-transfer torque memory self-reference read and write assist methods

Variable write and read methods for resistive random access memory

Diode assisted switching spin-transfer torque memory unit

Magnetoresistive read sensor using overlaid leads with insulating current guide layer

Magnetic writer for noise suppression in perpendicular recording media

STRAM with composite free magnetic element

Memory self-reference read and write assist methods

Thermally assisted multi-bit MRAM

ST-RAM magnetic element configurations to reduce switching current

Flux-closed STRAM with electronically reflective insulative spacer

Magnetic shift register as counter and data storage device

STRAM with compensation element

Magnetic memory with porous non-conductive current confinement layer

Spin-transfer torque memory self-reference read and write assist methods

Spin-torque memory with unidirectional write scheme

Memory cells including nanoporous layers containing conductive material

Magnetic sensor with electrically defined active area dimensions

Spin valve sensor

Spin-torque bit cell with unpinned reference layer and unidirectional write current

Stuck-at defect condition repair for a non-volatile memory cell

Variable write and read methods for resistive random access memory

Electronic devices utilizing spin torque transfer to flip magnetic orientation

Stuck-at defect condition repair for a non-volatile memory cell

MRAM cells including coupled free ferromagnetic layers for stabilization

Thermally assisted multi-bit MRAM

Devices including at least one multilayer adhesion layer

Method for fabricating a magnetic sensor assembly

Magnetic read head with an insulator layer between an MR sensor and rear portions of current contacts to provide enhanced sensitivity

ZHENG YUANKAI

STRAM with composite free magnetic element

Non volatile memory including stabilizing structures

Thermally assisted multi-bit MRAM

Magnetic memory with phonon glass electron crystal material

DIMITROV DIMITAR V

Memory cell with stress-induced anisotropy

Magnetic sensor with perpendicular anisotrophy free layer and side shields

Trilayer reader with current constraint at the ABS

CHEN YIRAN

Spin-transfer torque memory non-destructive self-reference read method

Spin-transfer torque memory non-destructive self-reference read method

XI HAIWEN

Magnetic tracks with domain wall storage anchors

Magnetic memory element with multi-domain storage layer

SEAGATE TEACHNOLOGY LLC

Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures

WANG DEXIN

ST-RAM magnetic element configurations to reduce switching current

LI HAI

Spin-transfer torque memory self-reference read method

GAO ZHENG

Magnetic sensing device including a sense enhancing layer

WANG XIAOBIN

Magnetic field assisted STRAM cells

ZHU WENZHONG

Magnetic memory with asymmetric energy barrier

SONG DIAN

Magnetic element with increased scissoring angle

TANG MICHAEL XUEFEI

Magnetic memory with porous non-conductive current confinement layer

XUE SONG S

Magnetic sensor including a free layer having perpendicular to the plane anisotropy

SINGLETON ERIC W

Magnetic sensing device with reduced shield-to-shield spacing