Inventor
YOO KWANG-DONG
KR7 patents
Patents
7 patentsUS6815794B2Nov 9, 2004
Semiconductor devices with multiple isolation structure and methods for fabricating the same
SAMSUNG ELECTRONICS CO LTD21 citations91
US5918135AJun 29, 1999
Methods for forming integrated circuit capacitors including dual electrode depositions
SAMSUNG ELECTRONICS CO LTD44 citations91
US6255697B1Jul 3, 2001
Integrated circuit devices including distributed and isolated dummy conductive regions
SAMSUNG ELECTRONICS CO LTD29 citations89
US6656814B2Dec 2, 2003
Methods of fabricating integrated circuit devices including distributed and isolated dummy conductive regions
SAMSUNG ELECTRONICS CO LTD7 citations70
US7446000B2Nov 4, 2008
Method of fabricating semiconductor device having gate dielectrics with different thicknesses
SAMSUNG ELECTRONICS CO LTD0 citations51
US7381621B2Jun 3, 2008
Methods of fabricating high voltage MOSFET having doped buried layer
SAMSUNG ELECTRONICS CO LTD1 citations50
US7176538B2Feb 13, 2007
High voltage MOSFET having doped buried layer
SAMSUNG ELECTRONICS CO LTD1 citations50