Inventor
WANG KAIYOU
CN8 patents
Patents
8 patentsUS11258231B2Feb 22, 2022
GaN-based VCSEL chip based on porous DBR and manufacturing method of the same
INST SEMICONDUCTORS CAS2 citations71
US10964829B2Mar 30, 2021
InGaN-based resonant cavity enhanced detector chip based on porous DBR
INST SEMICONDUCTORS CAS2 citations71
US10978121B2Apr 13, 2021
Voltage control magnetic random storage unit, memory and logic device composed thereby
INST SEMICONDUCTORS CAS2 citations67
US11249150B2Feb 15, 2022
Spin valve and spintronic device comprising the same
INST SEMICONDUCTORS CAS2 citations65
US11307270B2Apr 19, 2022
Spin valve with built-in electric field and spintronic device comprising the same
INST SEMICONDUCTORS CAS2 citations62
US11972786B2Apr 30, 2024
Function switchable magnetic random access memory and method for manufacturing the same
INST SEMICONDUCTORS CAS0 citations48
US12343711B2Jul 1, 2025
Semiconductor material based on metal nanowires and porous nitride and preparation method thereof
INST SEMICONDUCTORS CAS0 citations46
US12488820B2Dec 2, 2025
Spin-orbit torque magnetoresistive random access memory and method of operating the same
INST SEMICONDUCTORS CAS0 citations36