P

Inventor

SCHONENBERG KATHRYN T

US48 patents
⚠️ This page may combine multiple inventors who share the name “SCHONENBERG KATHRYN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

36 patents
US7144787B2Dec 5, 2006

Methods to improve the SiGe heterojunction bipolar device performance

IBM16 citations93
US6534371B2Mar 18, 2003

C implants for improved SiGe bipolar yield

IBM28 citations93
US7119416B1Oct 10, 2006

Bipolar transistor structure with self-aligned raised extrinsic base and methods

IBM21 citations92
US7037798B2May 2, 2006

Bipolar transistor structure with self-aligned raised extrinsic base and methods

IBM26 citations92
US6869852B1Mar 22, 2005

Self-aligned raised extrinsic base bipolar transistor structure and method

IBM20 citations92
US6780695B1Aug 24, 2004

BiCMOS integration scheme with raised extrinsic base

IBM24 citations92
US6744079B2Jun 1, 2004

Optimized blocking impurity placement for SiGe HBTs

IBM19 citations92
US6982442B2Jan 3, 2006

Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic base

IBM37 citations90
US9093425B1Jul 28, 2015

Self-aligned liner formed on metal semiconductor alloy contacts

IBM6 citations84
US7682917B2Mar 23, 2010

Disposable metallic or semiconductor gate spacer

IBM11 citations84
US7476914B2Jan 13, 2009

Methods to improve the SiGe heterojunction bipolar device performance

IBM8 citations84
US6927476B2Aug 9, 2005

Bipolar device having shallow junction raised extrinsic base and method for making the same

IBM16 citations84
US6448124B1Sep 10, 2002

Method for epitaxial bipolar BiCMOS

IBM16 citations84
US7750371B2Jul 6, 2010

Silicon germanium heterojunction bipolar transistor structure and method

IBM6 citations74
US7170083B2Jan 30, 2007

Bipolar transistor with collector having an epitaxial Si:C region

IBM9 citations74
US6844225B2Jan 18, 2005

Self-aligned mask formed utilizing differential oxidation rates of materials

IBM5 citations74
US6429500B1Aug 6, 2002

Semiconductor pin diode for high frequency applications

IBM11 citations73
US7598147B2Oct 6, 2009

Method of forming CMOS with Si:C source/drain by laser melting and recrystallization

IBM5 citations63
US7511317B2Mar 31, 2009

Porous silicon for isolation region formation and related structure

IBM4 citations63
US7442595B2Oct 28, 2008

Bipolar transistor with collector having an epitaxial Si:C region

IBM3 citations63
US7288827B2Oct 30, 2007

Self-aligned mask formed utilizing differential oxidation rates of materials

IBM3 citations63
US6977398B2Dec 20, 2005

C implants for improved SiGe bipolar yield

IBM2 citations63
US6720590B2Apr 13, 2004

C implants for improved SiGe bipolar yield

IBM4 citations63
US8618617B2Dec 31, 2013

Field effect transistor device

IBM3 citations62
US7678634B2Mar 16, 2010

Local stress engineering for CMOS devices

IBM4 citations62
US7919379B2Apr 5, 2011

Dielectric spacer removal

IBM5 citations61
US9553157B2Jan 24, 2017

Diffusion-controlled oxygen depletion of semiconductor contact interface

IBM0 citations52
US9472406B2Oct 18, 2016

Metal semiconductor alloy contact resistance improvement

IBM0 citations52
US9449827B2Sep 20, 2016

Metal semiconductor alloy contact resistance improvement

IBM1 citations52
US9443772B2Sep 13, 2016

Diffusion-controlled semiconductor contact creation

IBM1 citations52
US9397181B2Jul 19, 2016

Diffusion-controlled oxygen depletion of semiconductor contact interface

IBM1 citations52
US8981430B2Mar 17, 2015

Bipolar transistor with low resistance base contact and method of making the same

IBM0 citations52
US8378424B2Feb 19, 2013

Semiconductor structure having test and transistor structures

IBM1 citations52
US7955926B2Jun 7, 2011

Structure and method to control oxidation in high-k gate structures

IBM0 citations52
US7900167B2Mar 1, 2011

Silicon germanium heterojunction bipolar transistor structure and method

IBM1 citations52
US8779525B2Jul 15, 2014

Method for growing strain-inducing materials in CMOS circuits in a gate first flow

IBM0 citations51

GLOBALFOUNDRIES INC

6 patents

ULTRATECH INC

2 patents

CHAN KEVIN K

1 patent

GLUSCHENKOV OLEG

1 patent

DUBE ABHISHEK

1 patent

BAI BO

1 patent