Inventor
SCHONENBERG KATHRYN T
US48 patents
⚠️ This page may combine multiple inventors who share the name “SCHONENBERG KATHRYN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
36 patentsUS7144787B2Dec 5, 2006
Methods to improve the SiGe heterojunction bipolar device performance
IBM16 citations93
US6534371B2Mar 18, 2003
C implants for improved SiGe bipolar yield
IBM28 citations93
US7119416B1Oct 10, 2006
Bipolar transistor structure with self-aligned raised extrinsic base and methods
IBM21 citations92
US7037798B2May 2, 2006
Bipolar transistor structure with self-aligned raised extrinsic base and methods
IBM26 citations92
US6869852B1Mar 22, 2005
Self-aligned raised extrinsic base bipolar transistor structure and method
IBM20 citations92
US6780695B1Aug 24, 2004
BiCMOS integration scheme with raised extrinsic base
IBM24 citations92
US6744079B2Jun 1, 2004
Optimized blocking impurity placement for SiGe HBTs
IBM19 citations92
US6982442B2Jan 3, 2006
Structure and method for making heterojunction bipolar transistor having self-aligned silicon-germanium raised extrinsic base
IBM37 citations90
US9093425B1Jul 28, 2015
Self-aligned liner formed on metal semiconductor alloy contacts
IBM6 citations84
US7682917B2Mar 23, 2010
Disposable metallic or semiconductor gate spacer
IBM11 citations84
US7476914B2Jan 13, 2009
Methods to improve the SiGe heterojunction bipolar device performance
IBM8 citations84
US6927476B2Aug 9, 2005
Bipolar device having shallow junction raised extrinsic base and method for making the same
IBM16 citations84
US6448124B1Sep 10, 2002
Method for epitaxial bipolar BiCMOS
IBM16 citations84
US7750371B2Jul 6, 2010
Silicon germanium heterojunction bipolar transistor structure and method
IBM6 citations74
US7170083B2Jan 30, 2007
Bipolar transistor with collector having an epitaxial Si:C region
IBM9 citations74
US6844225B2Jan 18, 2005
Self-aligned mask formed utilizing differential oxidation rates of materials
IBM5 citations74
US6429500B1Aug 6, 2002
Semiconductor pin diode for high frequency applications
IBM11 citations73
US7598147B2Oct 6, 2009
Method of forming CMOS with Si:C source/drain by laser melting and recrystallization
IBM5 citations63
US7511317B2Mar 31, 2009
Porous silicon for isolation region formation and related structure
IBM4 citations63
US7442595B2Oct 28, 2008
Bipolar transistor with collector having an epitaxial Si:C region
IBM3 citations63
US7288827B2Oct 30, 2007
Self-aligned mask formed utilizing differential oxidation rates of materials
IBM3 citations63
US6977398B2Dec 20, 2005
C implants for improved SiGe bipolar yield
IBM2 citations63
US6720590B2Apr 13, 2004
C implants for improved SiGe bipolar yield
IBM4 citations63
US8618617B2Dec 31, 2013
Field effect transistor device
IBM3 citations62
US7678634B2Mar 16, 2010
Local stress engineering for CMOS devices
IBM4 citations62
US7919379B2Apr 5, 2011
Dielectric spacer removal
IBM5 citations61
US9553157B2Jan 24, 2017
Diffusion-controlled oxygen depletion of semiconductor contact interface
IBM0 citations52
US9472406B2Oct 18, 2016
Metal semiconductor alloy contact resistance improvement
IBM0 citations52
US9449827B2Sep 20, 2016
Metal semiconductor alloy contact resistance improvement
IBM1 citations52
US9443772B2Sep 13, 2016
Diffusion-controlled semiconductor contact creation
IBM1 citations52
US9397181B2Jul 19, 2016
Diffusion-controlled oxygen depletion of semiconductor contact interface
IBM1 citations52
US8981430B2Mar 17, 2015
Bipolar transistor with low resistance base contact and method of making the same
IBM0 citations52
US8378424B2Feb 19, 2013
Semiconductor structure having test and transistor structures
IBM1 citations52
US7955926B2Jun 7, 2011
Structure and method to control oxidation in high-k gate structures
IBM0 citations52
US7900167B2Mar 1, 2011
Silicon germanium heterojunction bipolar transistor structure and method
IBM1 citations52
US8779525B2Jul 15, 2014
Method for growing strain-inducing materials in CMOS circuits in a gate first flow
IBM0 citations51
GLOBALFOUNDRIES INC
6 patentsUS9379012B2Jun 28, 2016
Oxide mediated epitaxial nickel disilicide alloy contact formation
GLOBALFOUNDRIES INC7 citations84
US9236345B2Jan 12, 2016
Oxide mediated epitaxial nickel disilicide alloy contact formation
GLOBALFOUNDRIES INC6 citations84
US10707167B2Jul 7, 2020
Contacts to semiconductor substrate and methods of forming same
GLOBALFOUNDRIES INC0 citations52
US9865546B2Jan 9, 2018
Contacts to semiconductor substrate and methods of forming same
GLOBALFOUNDRIES INC0 citations52
US9293554B2Mar 22, 2016
Self-aligned liner formed on metal semiconductor alloy contacts
GLOBALFOUNDRIES INC0 citations52
US9633946B1Apr 25, 2017
Seamless metallization contacts
GLOBALFOUNDRIES INC1 citations49