Inventor
TUFTE OBERT N
6 patents
Patents
6 patentsUS4551394ANov 5, 1985
Integrated three-dimensional localized epitaxial growth of Si with localized overgrowth of GaAs
HONEYWELL INC130 citations94
US4814851AMar 21, 1989
High transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistor
HONEYWELL INC37 citations90
US4137355AJan 30, 1979
Ceramic coated with molten silicon
HONEYWELL INC33 citations89
US4112135ASep 5, 1978
Method for dip-coating ceramic with molten silicon
HONEYWELL INC41 citations89
US4706100ANov 10, 1987
High temperature hetero-epitaxial pressure sensor
HONEYWELL INC20 citations80
US4128680ADec 5, 1978
Silicon coated ceramic substrate with improvements for making electrical contact to the interface surface of the silicon
HONEYWELL INC26 citations79