Inventor
CHA YOUNG-KWAN
KR11 patents
Patents
11 patentsUS7602042B2Oct 13, 2009
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
SAMSUNG ELECTRONICS CO LTD26 citations92
US7453085B2Nov 18, 2008
Nano-elastic memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD17 citations90
US7998804B2Aug 16, 2011
Nonvolatile memory device including nano dot and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7935953B2May 3, 2011
Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same
SAMSUNG ELECTRONICS CO LTD11 citations84
US7446333B2Nov 4, 2008
Nonvolatile memory devices and methods of manufacturing the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US7919777B2Apr 5, 2011
Bottom gate thin film transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations73
US7816175B2Oct 19, 2010
Nano-elastic memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD5 citations71
US7936044B2May 3, 2011
Non-volatile memory devices and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD4 citations62
US7663136B2Feb 16, 2010
Method of manufacturing amorphous NiO thin films and nonvolatile memory devices using the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US7629207B2Dec 8, 2009
Bottom gate thin film transistor and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD3 citations62
US7542346B2Jun 2, 2009
Memory device and method for operating the same
SAMSUNG ELECTRONICS CO LTD0 citations52