Inventor
INNS DANIEL A
US6 patents
⚠️ This page may combine multiple inventors who share the name “INNS DANIEL A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
BEDELL STEPHEN W
3 patentsUS8933456B2Jan 13, 2015
Germanium-containing release layer for transfer of a silicon layer to a substrate
BEDELL STEPHEN W1 citations51
US8298923B2Oct 30, 2012
Germanium-containing release layer for transfer of a silicon layer to a substrate
BEDELL STEPHEN W0 citations51
US8653360B2Feb 18, 2014
Compositionally-graded band gap heterojunction solar cell
BEDELL STEPHEN W0 citations41
IBM
2 patentsUS7914619B2Mar 29, 2011
Thick epitaxial silicon by grain reorientation annealing and applications thereof
IBM1 citations51
US7749869B2Jul 6, 2010
Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites
IBM0 citations51