Inventor

EVANS DAVID R

US82 patents

⚠️ This page may combine multiple inventors who share the name “EVANS DAVID R”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EVANS DAVID R

SHARP LAB OF AMERICA INC

Buffered-layer memory cell

System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides

Back-to-back metal/semiconductor/metal (MSM) Schottky diode

Metal/semiconductor/metal current limiter

Metal/semiconductor/metal (MSM) back-to-back Schottky diode

Resistance random access memory devices and method of fabrication

Method to perform selective atomic layer deposition of zinc oxide

PCMO thin film with resistance random access memory (RRAM) characteristics

Dual metal gate CMOS devices and method for making the same

Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET

Metal/ZnOx/metal current limiter

Chemically active slurry for the polishing of noble metals and method for same

Chemical mechanical polish of PCMO thin films for RRAM applications

Strained silicon on insulator from film transfer and relaxation by hydrogen implantation

Method of affecting RRAM characteristics by doping PCMO thin films

Methods of forming a microlens array over a substrate employing a CMP stop

Nonvolatile solid state electro-optic modulator

Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer

High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application

Method of depositing a high-adhesive copper thin film on a metal nitride substrate

MOCVD metal oxide for one transistor memory

Method of making metal gate sub-micron MOS transistor

Strained silicon on insulator from film transfer and relaxation by hydrogen implantation

Memory cell with buffered-layer

Self-aligned shallow trench isolation process having improved polysilicon gate thickness control

Method for chemical mechanical polishing of thin films using end-point indicator structures

Method for forming an asymmetric crystalline structure memory cell

Method of monitoring PCMO precursor synthesis

Strain control of epitaxial oxide films using virtual substrates

Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films

Stress-loaded film and method for same

Smooth surface liquid phase epitaxial germanium

Nanotip electrode electroluminescence device with contoured phosphor layer

Nanoelectrochemical cell

Single-crystal silicon-on-glass from film transfer

System and method for forming a bipolar switching PCMO film

Copper metal precursor

Method of making self-aligned shallow trench isolation

Method to improve copper thin film adhesion to metal nitride substrates by the addition of water

Integrated circuit prepared by selectively cleaning copper substrates, in-situ, to remove copper oxides

Precursors for zirconium and hafnium oxide thin film deposition

Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films

System of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides

Substituted phenylethylene precursor and synthesis method

Bipolar switching PCMO capacitor

Electroformed metallization

SHARP MICROELECT TECH INC

Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing

VAIL SEAN ANDREW

Long wavelength absorbing porphyrin photosensitizers for dye-sensitized solar cells

TEKTRONIX INC

Self-aligned internal mobile ion getter for multi-layer metallization on integrated circuits

CATERPILLAR INC

Cross-members and pin couplers for lift arms