P

Inventor

YOKOGAWA TOSHIYA

JP109 patents
⚠️ This page may combine multiple inventors who share the name “YOKOGAWA TOSHIYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

30 patents
US6306211B1Oct 23, 2001

Method for growing semiconductor film and method for fabricating semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD84 citations98
US6989553B2Jan 24, 2006

Semiconductor device having an active region of alternating layers

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US6995396B2Feb 7, 2006

Semiconductor substrate, semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations93
US6864507B2Mar 8, 2005

Misfet

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6806109B2Oct 19, 2004

Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6690035B1Feb 10, 2004

Semiconductor device having an active region of alternating layers

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US6674131B2Jan 6, 2004

Semiconductor power device for high-temperature applications

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6654604B2Nov 25, 2003

Equipment for communication system

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6617653B1Sep 9, 2003

Misfet

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US7030417B2Apr 18, 2006

Semiconductor light emitting device and fabrication method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations92
US7009216B2Mar 7, 2006

Semiconductor light emitting device and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US6903383B2Jun 7, 2005

Semiconductor device having a high breakdown voltage for use in communication systems

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations92
US5956362ASep 21, 1999

Semiconductor light emitting device and method of etching

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations92
US5822347AOct 13, 1998

Semiconductor light emitting device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US4866489ASep 12, 1989

Semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD40 citations92
US7338827B2Mar 4, 2008

Nitride semiconductor laser and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US6940127B2Sep 6, 2005

Equipment for communication system and semiconductor integrated circuit device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6855571B1Feb 15, 2005

Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6580125B2Jun 17, 2003

Semiconductor device and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6504176B2Jan 7, 2003

Field effect transistor and method of manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US7221690B2May 22, 2007

Semiconductor laser and process for manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6927149B2Aug 9, 2005

Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6778308B2Aug 17, 2004

Process of fabricating semiconductor light emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6600203B2Jul 29, 2003

Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6953954B2Oct 11, 2005

Plasma oscillation switching device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US5274248ADec 28, 1993

Light-emitting device with II-VI compounds

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations73
US7396697B2Jul 8, 2008

Semiconductor light-emitting device and method for manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7056756B2Jun 6, 2006

Nitride semiconductor laser device and fabricating method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6917457B2Jul 12, 2005

Process of fabricating semiconductor light emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6900483B2May 31, 2005

Semiconductor device and method for manufacturing the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations63

PANASONIC CORP

12 patents
US7501667B2Mar 10, 2009

Nitride semiconductor light-emitting device

PANASONIC CORP16 citations93
US7846820B2Dec 7, 2010

Nitride semiconductor device and process for producing the same

PANASONIC CORP10 citations84
US8928004B2Jan 6, 2015

Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same

PANASONIC CORP12 citations83
US8896001B2Nov 25, 2014

Nitride semiconductor light emitting device

PANASONIC CORP5 citations73
US8852965B2Oct 7, 2014

Method of making semiconductor having superhydrophilic principal surface and method of arranging particles thereon

PANASONIC CORP4 citations73
US9147804B2Sep 29, 2015

Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting element

PANASONIC CORP2 citations63
US8841220B2Sep 23, 2014

Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure

PANASONIC CORP2 citations63
US8039283B2Oct 18, 2011

Nitride compound semiconductor element and method for manufacturing same

PANASONIC CORP2 citations63
US7470608B2Dec 30, 2008

Semiconductor light emitting device and fabrication method thereof

PANASONIC CORP5 citations63
US8981340B2Mar 17, 2015

Nitride semiconductor device and production method thereof

PANASONIC CORP2 citations62
US8866127B2Oct 21, 2014

Nitride semiconductor light-emitting element including Si-doped layer, and light source

PANASONIC CORP3 citations62
US8357607B2Jan 22, 2013

Method for fabricating nitride-based semiconductor device having electrode on m-plane

PANASONIC CORP4 citations62

YOKOGAWA TOSHIYA

3 patents

INOUE AKIRA

1 patent

OYA MITSUAKI

1 patent

KUMAGAI HIRONORI

1 patent

ASARI TAKUMA

1 patent

SEOUL VIOSYS CO LTD

1 patent

Showing the top 50 of 109 patents by PatentIndex Score.