Inventor
YOKOGAWA TOSHIYA
JP109 patents
⚠️ This page may combine multiple inventors who share the name “YOKOGAWA TOSHIYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
30 patentsUS6306211B1Oct 23, 2001
Method for growing semiconductor film and method for fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD84 citations98
US6989553B2Jan 24, 2006
Semiconductor device having an active region of alternating layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD44 citations96
US6995396B2Feb 7, 2006
Semiconductor substrate, semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations93
US6864507B2Mar 8, 2005
Misfet
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6806109B2Oct 19, 2004
Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6690035B1Feb 10, 2004
Semiconductor device having an active region of alternating layers
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US6674131B2Jan 6, 2004
Semiconductor power device for high-temperature applications
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6654604B2Nov 25, 2003
Equipment for communication system
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations93
US6617653B1Sep 9, 2003
Misfet
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations93
US7030417B2Apr 18, 2006
Semiconductor light emitting device and fabrication method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations92
US7009216B2Mar 7, 2006
Semiconductor light emitting device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US6903383B2Jun 7, 2005
Semiconductor device having a high breakdown voltage for use in communication systems
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD28 citations92
US5956362ASep 21, 1999
Semiconductor light emitting device and method of etching
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD29 citations92
US5822347AOct 13, 1998
Semiconductor light emitting device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations92
US4866489ASep 12, 1989
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD40 citations92
US7338827B2Mar 4, 2008
Nitride semiconductor laser and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US6940127B2Sep 6, 2005
Equipment for communication system and semiconductor integrated circuit device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6855571B1Feb 15, 2005
Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6580125B2Jun 17, 2003
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6504176B2Jan 7, 2003
Field effect transistor and method of manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US7221690B2May 22, 2007
Semiconductor laser and process for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6927149B2Aug 9, 2005
Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6778308B2Aug 17, 2004
Process of fabricating semiconductor light emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6600203B2Jul 29, 2003
Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6953954B2Oct 11, 2005
Plasma oscillation switching device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US5274248ADec 28, 1993
Light-emitting device with II-VI compounds
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations73
US7396697B2Jul 8, 2008
Semiconductor light-emitting device and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7056756B2Jun 6, 2006
Nitride semiconductor laser device and fabricating method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6917457B2Jul 12, 2005
Process of fabricating semiconductor light emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
US6900483B2May 31, 2005
Semiconductor device and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations63
PANASONIC CORP
12 patentsUS7501667B2Mar 10, 2009
Nitride semiconductor light-emitting device
PANASONIC CORP16 citations93
US7846820B2Dec 7, 2010
Nitride semiconductor device and process for producing the same
PANASONIC CORP10 citations84
US8928004B2Jan 6, 2015
Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same
PANASONIC CORP12 citations83
US8896001B2Nov 25, 2014
Nitride semiconductor light emitting device
PANASONIC CORP5 citations73
US8852965B2Oct 7, 2014
Method of making semiconductor having superhydrophilic principal surface and method of arranging particles thereon
PANASONIC CORP4 citations73
US9147804B2Sep 29, 2015
Nitride semiconductor light-emitting element and light source including the nitride semiconductor light-emitting element
PANASONIC CORP2 citations63
US8841220B2Sep 23, 2014
Gallium nitride based semiconductor light-emitting element, light source, and method for forming unevenness structure
PANASONIC CORP2 citations63
US8039283B2Oct 18, 2011
Nitride compound semiconductor element and method for manufacturing same
PANASONIC CORP2 citations63
US7470608B2Dec 30, 2008
Semiconductor light emitting device and fabrication method thereof
PANASONIC CORP5 citations63
US8981340B2Mar 17, 2015
Nitride semiconductor device and production method thereof
PANASONIC CORP2 citations62
US8866127B2Oct 21, 2014
Nitride semiconductor light-emitting element including Si-doped layer, and light source
PANASONIC CORP3 citations62
US8357607B2Jan 22, 2013
Method for fabricating nitride-based semiconductor device having electrode on m-plane
PANASONIC CORP4 citations62
YOKOGAWA TOSHIYA
3 patentsUS8791473B2Jul 29, 2014
Nitride semiconductor light-emitting element, illuminating device, liquid crystal display device, method for producing nitride semiconductor light-emitting element and method for manufacturing illuminating device
YOKOGAWA TOSHIYA8 citations83
US8110851B2Feb 7, 2012
Nitride-based semiconductor device and method for fabricating the same
YOKOGAWA TOSHIYA9 citations83
US8785965B2Jul 22, 2014
Nitride-based semiconductor light-emitting device and method for fabricating the same
YOKOGAWA TOSHIYA2 citations62
INOUE AKIRA
1 patentOYA MITSUAKI
1 patentKUMAGAI HIRONORI
1 patentASARI TAKUMA
1 patentSEOUL VIOSYS CO LTD
1 patentShowing the top 50 of 109 patents by PatentIndex Score.