Inventor

HERRMANN TOM

DE21 patents

⚠️ This page may combine multiple inventors who share the name “HERRMANN TOM”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

HERRMANN TOM

GLOBALFOUNDRIES INC

Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure

Resistor structure with high resistance based on very thin semiconductor layer

Method of forming a semiconductor structure including a vertical nanowire

Capacitive structure in a semiconductor device having reduced capacitance variability

Transistor element with reduced lateral electrical field

Semiconductor structure including a nonvolatile memory cell and method for the formation thereof

Threshold voltage adjustment in a fin transistor by corner implantation

Thin body field effect transistor including a counter-doped channel area and a method of forming the same

Fully depleted silicon on insulator (FDSOI) lateral double-diffused metal oxide semiconductor (LDMOS) for high frequency applications

Laterally double diffused metal oxide semiconductor (LDMOS) device on fully depleted silicon on insulator (FDSOI) enabling high input voltage

Buried-channel low noise transistors and methods of making such devices

GLOBALFOUNDRIES US INC

Structure including transistor using buried insulator layer as gate dielectric and trench isolations in source and drain

Asymmetric FET for FDSOI devices

Asymmetric FET for FDSOI devices

Structure with back-gate having oppositely doped semiconductor regions

BALDAUF TIM

Integrated circuits having protruding source and drain regions and methods for forming integrated circuits

Threshold voltage adjustment in a Fin transistor by corner implantation

Strain engineering in three-dimensional transistors based on strained isolation material

GLOBALFOUNDRIES DRESDEN MOD 1

Charge-trapping sidewall spacer-type non-volatile memory device and method

Floating-gate devices in high voltage applications

FLACHOWSKY STEFAN

Stabilized metal silicides in silicon-germanium regions of transistor elements