Inventor
HUANG YI-JYUN
TW12 patents
Patents
12 patentsUS10971588B2Apr 6, 2021
Semiconductor device including FinFET with self-align contact
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US10340348B2Jul 2, 2019
Method of manufacturing finFETs with self-align contacts
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US9773879B2Sep 26, 2017
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD10 citations84
US10685880B2Jun 16, 2020
Methods for reducing contact depth variation in semiconductor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10522634B2Dec 31, 2019
Finfet with self-aligned source/drain
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10164034B2Dec 25, 2018
Semiconductor device and a method for fabricating the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12438049B2Oct 7, 2025
Methods for reducing contact depth variation in semiconductor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12009399B2Jun 11, 2024
Semiconductor device suppressing rounded shapes of source/drain contact layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11495494B2Nov 8, 2022
Methods for reducing contact depth variation in semiconductor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11398559B2Jul 26, 2022
Mitigation of time dependent dielectric breakdown
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11062945B2Jul 13, 2021
Methods for reducing contact depth variation in semiconductor fabrication
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10658486B2May 19, 2020
Mitigation of time dependent dielectric breakdown
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62