Inventor
CHING WEN-HAO
TW27 patents
⚠️ This page may combine multiple inventors who share the name “CHING WEN-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
EMEMORY TECHNOLOGY INC
18 patentsUS8355282B2Jan 15, 2013
Logic-based multiple time programming memory cell
EMEMORY TECHNOLOGY INC17 citations92
US9042174B2May 26, 2015
Non-volatile memory cell
EMEMORY TECHNOLOGY INC7 citations84
US9941011B2Apr 10, 2018
Memory array with one shared deep doped region
EMEMORY TECHNOLOGY INC2 citations83
US9425204B2Aug 23, 2016
Non-volatile memory for high rewrite cycles application
EMEMORY TECHNOLOGY INC5 citations83
US11164880B2Nov 2, 2021
Multi-time programming non-volatile memory
EMEMORY TECHNOLOGY INC3 citations73
US10224108B2Mar 5, 2019
Non-volatile memory
EMEMORY TECHNOLOGY INC3 citations73
US9153327B2Oct 6, 2015
Flash memory apparatus with voltage boost circuit
EMEMORY TECHNOLOGY INC6 citations73
US9099392B2Aug 4, 2015
Method of fabricating erasable programmable single-poly nonvolatile memory
EMEMORY TECHNOLOGY INC4 citations73
US11929434B2Mar 12, 2024
High voltage switch device
EMEMORY TECHNOLOGY INC0 citations62
US11335805B2May 17, 2022
High voltage switch device
EMEMORY TECHNOLOGY INC0 citations62
US9666279B2May 30, 2017
Non-volatile memory for high rewrite cycles application
EMEMORY TECHNOLOGY INC1 citations62
US9633729B2Apr 25, 2017
Non-volatile memory for high rewrite cycles application
EMEMORY TECHNOLOGY INC1 citations62
US8363475B2Jan 29, 2013
Non-volatile memory unit cell with improved sensing margin and reliability
EMEMORY TECHNOLOGY INC3 citations62
US7872898B2Jan 18, 2011
One time programmable read only memory and programming method thereof
EMEMORY TECHNOLOGY INC3 citations62
US9466392B2Oct 11, 2016
Memory array with memory cells arranged in pages
EMEMORY TECHNOLOGY INC0 citations52
US10255980B2Apr 9, 2019
Memory array with one shared deep doped region
EMEMORY TECHNOLOGY INC0 citations51
US9792993B2Oct 17, 2017
Memory cell with high endurance for multiple program operations
EMEMORY TECHNOLOGY INC0 citations51
US10181342B2Jan 15, 2019
Method for improving a program speed and an erase speed of a memory
EMEMORY TECHNOLOGY INC0 citations50
HSU TE-HSUN
3 patentsUS8592886B2Nov 26, 2013
Erasable programmable single-ploy nonvolatile memory
HSU TE-HSUN58 citations96
US8958245B2Feb 17, 2015
Logic-based multiple time programming memory cell compatible with generic CMOS processes
HSU TE-HSUN9 citations81
US8658495B2Feb 25, 2014
Method of fabricating erasable programmable single-poly nonvolatile memory
HSU TE-HSUN4 citations72