P

Inventor

CHING WEN-HAO

TW27 patents
⚠️ This page may combine multiple inventors who share the name “CHING WEN-HAO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EMEMORY TECHNOLOGY INC

18 patents
US8355282B2Jan 15, 2013

Logic-based multiple time programming memory cell

EMEMORY TECHNOLOGY INC17 citations92
US9042174B2May 26, 2015

Non-volatile memory cell

EMEMORY TECHNOLOGY INC7 citations84
US9941011B2Apr 10, 2018

Memory array with one shared deep doped region

EMEMORY TECHNOLOGY INC2 citations83
US9425204B2Aug 23, 2016

Non-volatile memory for high rewrite cycles application

EMEMORY TECHNOLOGY INC5 citations83
US11164880B2Nov 2, 2021

Multi-time programming non-volatile memory

EMEMORY TECHNOLOGY INC3 citations73
US10224108B2Mar 5, 2019

Non-volatile memory

EMEMORY TECHNOLOGY INC3 citations73
US9153327B2Oct 6, 2015

Flash memory apparatus with voltage boost circuit

EMEMORY TECHNOLOGY INC6 citations73
US9099392B2Aug 4, 2015

Method of fabricating erasable programmable single-poly nonvolatile memory

EMEMORY TECHNOLOGY INC4 citations73
US11929434B2Mar 12, 2024

High voltage switch device

EMEMORY TECHNOLOGY INC0 citations62
US11335805B2May 17, 2022

High voltage switch device

EMEMORY TECHNOLOGY INC0 citations62
US9666279B2May 30, 2017

Non-volatile memory for high rewrite cycles application

EMEMORY TECHNOLOGY INC1 citations62
US9633729B2Apr 25, 2017

Non-volatile memory for high rewrite cycles application

EMEMORY TECHNOLOGY INC1 citations62
US8363475B2Jan 29, 2013

Non-volatile memory unit cell with improved sensing margin and reliability

EMEMORY TECHNOLOGY INC3 citations62
US7872898B2Jan 18, 2011

One time programmable read only memory and programming method thereof

EMEMORY TECHNOLOGY INC3 citations62
US9466392B2Oct 11, 2016

Memory array with memory cells arranged in pages

EMEMORY TECHNOLOGY INC0 citations52
US10255980B2Apr 9, 2019

Memory array with one shared deep doped region

EMEMORY TECHNOLOGY INC0 citations51
US9792993B2Oct 17, 2017

Memory cell with high endurance for multiple program operations

EMEMORY TECHNOLOGY INC0 citations51
US10181342B2Jan 15, 2019

Method for improving a program speed and an erase speed of a memory

EMEMORY TECHNOLOGY INC0 citations50

HSU TE-HSUN

3 patents

CHEN HSIN-MING

2 patents

CHING WEN-HAO

1 patent

YANG CHING-SUNG

1 patent

LAI TSUNG-MU

1 patent

WANG SHIH-CHEN

1 patent