Inventor

KANG SEUNG H

US131 patents

⚠️ This page may combine multiple inventors who share the name “KANG SEUNG H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KANG SEUNG H

QUALCOMM INC

Magnetic tunnel junction cell including multiple vertical magnetic domains

Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layer

Memory cell and method of forming a magnetic tunnel junction (MTJ) of a memory cell

Bit line voltage control in spin transfer torque magnetoresistive random access memory

Magnetic tunnel junction device with separate read and write paths

Controlled value reference signal of resistance based memory circuit

Spin transfer torque magnetoresistive random access memory and design methods

Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory

System and method of sensing a memory cell

Physically unclonable function based on programming voltage of magnetoresistive random-access memory

Physically unclonable function based on breakdown voltage of metal-insulator-metal device

System and method to provide a reference cell using magnetic tunnel junction cells

Amorphous spacerlattice spacer for perpendicular MTJs

Magnetic tunnel junction device and fabrication

System and method of programming a memory cell

Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same

Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions

Magnetic random access memory (MRAM)layout with uniform pattern

LI XIA

Method of forming a magnetic tunnel junction structure

MTJ structure and integration scheme

MRAM device and integration techniques compatible with logic integration

Fabrication and integration of devices with top and bottom electrodes including magnetic tunnel junctions

MTP MTJ device

Magnetic tunnel junction device and fabrication

Magnetic tunnel junction device and fabrication

CHEN WEI-CHUAN

Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device

Fabricating a magnetic tunnel junction storage element

Magnetic storage element utilizing improved pinned layer stack

Methods of integrated shielding into MTJ device for MRAM

ZHU XIAOCHUN

Strain induced reduction of switching current in spin-transfer torque switching devices

Magnetic tunnel junction based random number generator

Asymmetric write scheme for magnetic bit cell elements

Circuit and method for generating a reference level for a magnetic random access memory element

KANG SEUNG H

Magnetic element utilizing protective sidewall passivation

Two mask MTJ integration for STT MRAM

STT MRAM magnetic tunnel junction architecture and integration

LEE KANGHO

Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)

Magnetic tunnel junction device and fabrication

Magnetic tunnel junction device and fabrication

KIM JUNG PILL

OTP cell with reversed MTJ connection

Non-volatile memory array configurable for high performance and high density

AGERE SYSTEMS INC

Solder bump structure for flip chip semiconductor devices and method of manufacture therefore

Integrated circuit device incorporating metallurgical bond to enhance thermal conduction to a heat sink

JUNG SEONG-OOK

Write operation for spin transfer torque magnetoresistive random access memory with reduced bit cell size

RYU KYUNGHO

Invalid write prevention for STT-MRAM array

YOON SEI SEUNG

Word line voltage control in STT-MRAM

RAO HARI M

Generating a non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction

WU WENQING

Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements

GU SHIQUN

Magnetic tunnel junction (MTJ) storage element and spin transfer torque magnetoresistive random access memory (STT-MRAM) cells having an MTJ