Inventor
CHANG YUN
SA36 patents
⚠️ This page may combine multiple inventors who share the name “CHANG YUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAUDI ARABIAN OIL CO
12 patentsUS9546316B2Jan 17, 2017
Densifying carbon dioxide with a dispersion of carbon dioxide-philic water capsules
SAUDI ARABIAN OIL CO4 citations82
US10125307B2Nov 13, 2018
Stabilization of petroleum surfactants for enhancing oil recovery
SAUDI ARABIAN OIL CO2 citations73
US10053616B2Aug 21, 2018
Encapsulated nanocompositions for increasing hydrocarbon recovery
SAUDI ARABIAN OIL CO3 citations73
US10093851B2Oct 9, 2018
Encapsulation of an acid precursor for oil field applications
SAUDI ARABIAN OIL CO2 citations72
US9796919B2Oct 24, 2017
Encapsulation of an acid precursor for oil field applications
SAUDI ARABIAN OIL CO5 citations72
US11060014B2Jul 13, 2021
Densifying carbon dioxide with a dispersion of carbon dioxide-philic water capsules
SAUDI ARABIAN OIL CO1 citations71
US10550310B2Feb 4, 2020
Encapsulated nanocompositions for increasing hydrocarbon recovery
SAUDI ARABIAN OIL CO0 citations52
US10550311B2Feb 4, 2020
Encapsulated nanocompositions for increasing hydrocarbon recovery
SAUDI ARABIAN OIL CO0 citations52
US10538693B2Jan 21, 2020
Stabilization of petroleum surfactants for enhancing oil recovery
SAUDI ARABIAN OIL CO0 citations52
US10400158B2Sep 3, 2019
Densifying carbon dioxide with a dispersion of carbon dioxide-philic water capsules
SAUDI ARABIAN OIL CO0 citations50
US10047276B2Aug 14, 2018
Densifying carbon dioxide with a dispersion of carbon dioxide-philic water capsules
SAUDI ARABIAN OIL CO0 citations50
US8869894B2Oct 28, 2014
Plugging thief zones and fractures by in-situ and in-depth crystallization for improving water sweep efficiency of sandstone and carbonate reservoirs
SAUDI ARABIAN OIL CO0 citations46
MACRONIX INT CO LTD
11 patentsUS6177317B1Jan 23, 2001
Method of making nonvolatile memory devices having reduced resistance diffusion regions
MACRONIX INT CO LTD403 citations98
US5836772ANov 17, 1998
Interpoly dielectric process
MACRONIX INT CO LTD96 citations97
US5696019ADec 9, 1997
Self-aligned trench isolation for memory array using sidewall spacers
MACRONIX INT CO LTD60 citations96
US6544844B2Apr 8, 2003
Method for forming a flash memory cell having contoured floating gate surface
MACRONIX INT CO LTD16 citations92
US6459119B1Oct 1, 2002
Contact array structure for buried type transistor
MACRONIX INT CO LTD33 citations92
US6413818B1Jul 2, 2002
Method for forming a contoured floating gate cell
MACRONIX INT CO LTD36 citations92
US6248631B1Jun 19, 2001
Method for forming a v-shaped floating gate
MACRONIX INT CO LTD26 citations92
US5834351ANov 10, 1998
Nitridation process with peripheral region protection
MACRONIX INT CO LTD23 citations92
US5763309AJun 9, 1998
Self-aligned isolation and planarization process for memory array
MACRONIX INT CO LTD53 citations92
US6191000B1Feb 20, 2001
Shallow trench isolation method used in a semiconductor wafer
MACRONIX INT CO LTD15 citations83
US6680506B2Jan 20, 2004
Method for forming a flash memory cell having contoured floating gate surface
MACRONIX INT CO LTD1 citations52
TAIWAN SEMICONDUCTOR MFG CO LTD
4 patentsUS10510671B2Dec 17, 2019
Method for forming semiconductor device structure with conductive line
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US9460957B2Oct 4, 2016
Method and structure for nitrogen-doped shallow-trench isolation dielectric
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations69
US10879186B1Dec 29, 2020
Method for forming semiconductor device structure with conductive line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10770401B2Sep 8, 2020
Method for forming semiconductor device structure with conductive line
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
3 patentsUS7368775B2May 6, 2008
Single transistor DRAM cell with reduced current leakage and method of manufacture
TAIWAN SEMICONDUCTOR MFG3 citations62
US7087483B2Aug 8, 2006
Single transistor RAM cell and method of manufacture
TAIWAN SEMICONDUCTOR MFG4 citations62
US7176081B2Feb 13, 2007
Low temperature method for metal deposition
TAIWAN SEMICONDUCTOR MFG0 citations51
SAMSUNG ELECTRONICS CO LTD
3 patentsUS12130306B2Oct 29, 2024
Module substrate for semiconductor module, semiconductor module and test socket for testing the same
SAMSUNG ELECTRONICS CO LTD0 citations56
US12019485B2Jun 25, 2024
Storage device testing module
SAMSUNG ELECTRONICS CO LTD0 citations52
US12038473B2Jul 16, 2024
Test socket for performing a test on an electronic device
SAMSUNG ELECTRONICS CO LTD0 citations46