Inventor
LIN JING-RU
TW6 patents
Patents
6 patentsUS11532637B2Dec 20, 2022
Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory region
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US10879257B2Dec 29, 2020
Integrated chip having a logic gate electrode and a tunnel dielectric layer
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9799755B2Oct 24, 2017
Method for manufacturing memory device and method for manufacturing shallow trench isolation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12114503B2Oct 8, 2024
Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10505015B2Dec 10, 2019
Memory device and method of fabricating thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10269822B2Apr 23, 2019
Method to fabricate uniform tunneling dielectric of embedded flash memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50