Inventor
HARADA SHINSUKE
JP72 patents
⚠️ This page may combine multiple inventors who share the name “HARADA SHINSUKE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJI ELECTRIC CO LTD
33 patentsUS10199493B2Feb 5, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD6 citations84
US10008592B1Jun 26, 2018
Semiconductor device
FUJI ELECTRIC CO LTD16 citations84
US10903351B2Jan 26, 2021
Semiconductor device
FUJI ELECTRIC CO LTD2 citations73
US10770581B2Sep 8, 2020
Semiconductor device
FUJI ELECTRIC CO LTD3 citations73
US10622446B2Apr 14, 2020
Silicon carbide based power semiconductor device with low on voltage and high speed characteristics
FUJI ELECTRIC CO LTD3 citations73
US10522673B2Dec 31, 2019
Semiconductor device having a schottky barrier diode
FUJI ELECTRIC CO LTD3 citations73
US10403749B2Sep 3, 2019
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD4 citations73
US10304954B2May 28, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD2 citations73
US10263105B2Apr 16, 2019
High voltage semiconductor device
FUJI ELECTRIC CO LTD4 citations73
US10186610B2Jan 22, 2019
Semiconductor device and method of manufacturing the semiconductor device
FUJI ELECTRIC CO LTD2 citations73
US9653599B2May 16, 2017
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD4 citations73
US9627486B2Apr 18, 2017
Semiconductor device
FUJI ELECTRIC CO LTD3 citations73
US10600921B2Mar 24, 2020
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10439060B2Oct 8, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10418478B2Sep 17, 2019
Semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10374080B2Aug 6, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD2 citations72
US10546950B2Jan 28, 2020
Semiconductor device
FUJI ELECTRIC CO LTD1 citations63
US12261217B2Mar 25, 2025
Semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US11996475B2May 28, 2024
Semiconductor device
FUJI ELECTRIC CO LTD0 citations62
US11437508B2Sep 6, 2022
Semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US10276653B2Apr 30, 2019
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD1 citations62
US12563820B2Feb 24, 2026
Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US12094939B2Sep 17, 2024
Semiconductor device having a gate electrode, an interlayer insulating film and a barrier metal provided in a trench
FUJI ELECTRIC CO LTD0 citations52
US10403713B2Sep 3, 2019
Method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD0 citations52
US10211330B2Feb 19, 2019
Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
FUJI ELECTRIC CO LTD0 citations52
US10062750B2Aug 28, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD1 citations52
US10032866B2Jul 24, 2018
Semiconductor device and method of manufacturing semiconductor device
FUJI ELECTRIC CO LTD1 citations52
US9923062B2Mar 20, 2018
Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device
FUJI ELECTRIC CO LTD1 citations52
US9722018B2Aug 1, 2017
Vertical high voltage semiconductor apparatus and fabrication method of vertical high voltage semiconductor apparatus
FUJI ELECTRIC CO LTD1 citations52
US9537002B2Jan 3, 2017
Semiconductor device with SiC base layer
FUJI ELECTRIC CO LTD1 citations52
US9362392B2Jun 7, 2016
Vertical high-voltage semiconductor device and fabrication method thereof
FUJI ELECTRIC CO LTD1 citations52
US12426330B2Sep 23, 2025
Semiconductor device
FUJI ELECTRIC CO LTD0 citations51
US12119399B2Oct 15, 2024
Semiconductor device including vertical MOSFET and Schottky barrier diode
FUJI ELECTRIC CO LTD0 citations51
NAT INST OF ADVANCED IND SCIEN
8 patentsUS6759684B2Jul 6, 2004
SiC semiconductor device
NAT INST OF ADVANCED IND SCIEN29 citations92
US7265388B2Sep 4, 2007
Semiconductor device
NAT INST OF ADVANCED IND SCIEN29 citations91
US8003991B2Aug 23, 2011
Silicon carbide MOS field effect transistor with built-in Schottky diode and method for fabrication thereof
NAT INST OF ADVANCED IND SCIEN10 citations84
US7880173B2Feb 1, 2011
Semiconductor device and method of manufacturing same
NAT INST OF ADVANCED IND SCIEN7 citations84
US7538352B2May 26, 2009
Semiconductor device and power converter, driving inverter, general-purpose inverter and high-power high-frequency communication device using same
NAT INST OF ADVANCED IND SCIEN8 citations83
US7728336B2Jun 1, 2010
Silicon carbide semiconductor device and method for producing the same
NAT INST OF ADVANCED IND SCIEN7 citations74
US6812102B2Nov 2, 2004
Semiconductor device manufacturing method
NAT INST OF ADVANCED IND SCIEN11 citations73
US7811874B2Oct 12, 2010
Method for manufacturing silicon carbide semiconductor device, and silicon carbide semiconductor device
NAT INST OF ADVANCED IND SCIEN6 citations62
TOSHIBA KK
4 patentsUS10243038B1Mar 26, 2019
Semiconductor device
TOSHIBA KK8 citations84
US9978842B2May 22, 2018
Semiconductor device and method for manufacturing the same
TOSHIBA KK2 citations72
US10249717B2Apr 2, 2019
Semiconductor device and method for manufacturing the same
TOSHIBA KK1 citations62
US11398556B2Jul 26, 2022
Semiconductor device, inverter circuit, drive device, vehicle, and elevator
TOSHIBA KK1 citations61
SANYO ELECTRIC CO
1 patentDAIKIN IND LTD
1 patentHARADA YUICHI
1 patentNAT INST ADVANCED IND SCIENCE & TECH
1 patentSUMITOMO ELECTRIC INDUSTRIES
1 patentShowing the top 50 of 72 patents by PatentIndex Score.