Inventor
Huang hui-lin
TW3 patents
Patents
3 patentsUS12557367B2Feb 17, 2026
Source/drain regions formed using metal containing block masks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12532518B2Jan 20, 2026
Transistor source/drain regions and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12243783B2Mar 4, 2025
Epitaxial source/drain recess formation with metal-comprising masking layers and structures resulting therefrom
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60