Inventor
BORODOVSKY YAN A
US20 patents
⚠️ This page may combine multiple inventors who share the name “BORODOVSKY YAN A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INTEL CORP
17 patentsUS5424154AJun 13, 1995
Lithographic emhancement method and apparatus for randomly spaced structures
INTEL CORP186 citations98
US5532090AJul 2, 1996
Method and apparatus for enhanced contact and via lithography
INTEL CORP108 citations97
US5498579AMar 12, 1996
Method of producing semiconductor device layer layout
INTEL CORP115 citations94
US10014256B2Jul 3, 2018
Unidirectional metal on layer with ebeam
INTEL CORP10 citations83
US10191376B2Jan 29, 2019
Cross scan proximity correction with ebeam universal cutter
INTEL CORP3 citations72
US9899182B2Feb 20, 2018
Corner rounding correction for electron beam (Ebeam) direct write system
INTEL CORP6 citations72
US10747115B2Aug 18, 2020
Cross scan proximity correction with ebeam universal cutter
INTEL CORP1 citations62
US10386722B2Aug 20, 2019
Ebeam staggered beam aperture array
INTEL CORP1 citations62
US10290528B2May 14, 2019
Ebeam align on the fly
INTEL CORP1 citations62
US10578970B2Mar 3, 2020
Ebeam universal cutter
INTEL CORP0 citations51
US10236161B2Mar 19, 2019
Fine alignment system for electron beam exposure system
INTEL CORP0 citations51
US10216087B2Feb 26, 2019
Ebeam universal cutter
INTEL CORP0 citations51
US10067416B2Sep 4, 2018
Ebeam three beam aperture array
INTEL CORP1 citations51
US9897908B2Feb 20, 2018
Ebeam three beam aperture array
INTEL CORP1 citations51
US9324652B2Apr 26, 2016
Method of creating a maskless air gap in back end interconnections with double self-aligned vias
INTEL CORP1 citations51
US10338474B2Jul 2, 2019
Underlying absorbing or conducting layer for Ebeam direct write (EBDW) lithography
INTEL CORP0 citations50
US9952511B2Apr 24, 2018
Ebeam non-universal cutter
INTEL CORP0 citations41