Inventor
KAWAMURA SHOUICHI
JP18 patents
⚠️ This page may combine multiple inventors who share the name “KAWAMURA SHOUICHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
FUJITSU LTD
16 patentsUS5608670AMar 4, 1997
Flash memory with improved erasability and its circuitry
FUJITSU LTD66 citations96
US5590074ADec 31, 1996
Nonvolatile semiconductor memory
FUJITSU LTD82 citations96
US5576637ANov 19, 1996
XOR CMOS logic gate
FUJITSU LTD40 citations96
US5487036AJan 23, 1996
Nonvolatile semiconductor memory
FUJITSU LTD79 citations96
US5537356AJul 16, 1996
Nonvolatile semiconductor memory
FUJITSU LTD89 citations95
US5490107AFeb 6, 1996
Nonvolatile semiconductor memory
FUJITSU LTD22 citations93
US5770963AJun 23, 1998
Flash memory with improved erasability and its circuitry
FUJITSU LTD19 citations92
US5592419AJan 7, 1997
Flash memory with improved erasability and its circuitry
FUJITSU LTD23 citations92
US5485424AJan 16, 1996
Semiconductor memory and redundant-address writing method
FUJITSU LTD32 citations92
US5406524AApr 11, 1995
Nonvolatile semiconductor memory that eases the dielectric strength requirements
FUJITSU LTD24 citations92
US5631597AMay 20, 1997
Negative voltage circuit for a flash memory
FUJITSU LTD10 citations82
US6288945B1Sep 11, 2001
Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
FUJITSU LTD7 citations74
US5815440ASep 29, 1998
Semiconductor memory device with electrically controllable threshold voltage
FUJITSU LTD7 citations74
US5572463ANov 5, 1996
Nonvolatile semiconductor memory with pre-read means
FUJITSU LTD5 citations74
US5581107ADec 3, 1996
Nonvolatile semiconductor memory that eases the dielectric strength requirements
FUJITSU LTD10 citations73
US6611464B2Aug 26, 2003
Nonvolatile semiconductor memory device having electrically and collectively erasable characteristics
FUJITSU LTD0 citations52