Inventor
HU CHANMING
US2 patents
Patents
2 patentsUS6875655B2Apr 5, 2005
Method of forming DRAM capacitors with protected outside crown surface for more robust structures
TAIWAN SEMICONDUCTOR MFG63 citations95
US7161204B2Jan 9, 2007
DRAM capacitor structure with increased electrode support for preventing process damage and exposed electrode surface for increasing capacitor area
TAIWAN SEMICONDUCTOR MFG4 citations62