P

Inventor

GU GEORGE Y

US14 patents
⚠️ This page may combine multiple inventors who share the name “GU GEORGE Y”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

EVOQUA WATER TECH LLC

4 patents
US11929533B2Mar 12, 2024

Anion exchange membranes for redox flow batteries

EVOQUA WATER TECH LLC0 citations61
US12540090B2Feb 3, 2026

Methods and systems for treating phosphogypsum-containing water

EVOQUA WATER TECH LLC0 citations60
US12479748B2Nov 25, 2025

Methods and systems for treating phosphogypsum-containing water

EVOQUA WATER TECH LLC0 citations60
US11795074B2Oct 24, 2023

Half-cell electrochemical configurations for self-cleaning electrochlorination devices

EVOQUA WATER TECH LLC0 citations59

EVOQUA WATER TECH PTE LTD

2 patents
US9556044B2Jan 31, 2017

Electrodesalination system and method

EVOQUA WATER TECH PTE LTD2 citations70
US9731247B2Aug 15, 2017

Ion exchange membranes

EVOQUA WATER TECH PTE LTD1 citations61

EVOQUA WATER TECHNOLGIES LLC

2 patents
US11492279B2Nov 8, 2022

Regulation of process stream composition for improved electrolyzer performance

EVOQUA WATER TECHNOLGIES LLC0 citations53
US12351497B2Jul 8, 2025

Methods and systems for treating phosphogypsum-containing water

EVOQUA WATER TECHNOLGIES LLC0 citations46

LIN JUCHUI RAY

1 patent
US8703831B2Apr 22, 2014

Ion exchange membranes

LIN JUCHUI RAY13 citations91

EVOQUA WATER TECHNOLOGIES PTE LTD

1 patent
US9023902B2May 5, 2015

Ion exchange membranes

EVOQUA WATER TECHNOLOGIES PTE LTD16 citations88

FEI CO

1 patent
US7674706B2Mar 9, 2010

System for modifying small structures using localized charge transfer mechanism to remove or deposit material

FEI CO13 citations82

GU GEORGE Y

1 patent
US8163641B2Apr 24, 2012

System for modifying small structures

GU GEORGE Y5 citations67

HERSCHBEIN STEVEN B

1 patent
US8111903B2Feb 7, 2012

Inline low-damage automated failure analysis

HERSCHBEIN STEVEN B2 citations54

IBM

1 patent
US7867910B2Jan 11, 2011

Method of accessing semiconductor circuits from the backside using ion-beam and gas-etch

IBM0 citations46