Inventor

WU CHANG-RONG

TW34 patents

⚠️ This page may combine multiple inventors who share the name “WU CHANG-RONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WU CHANG-RONG

NANYA TECHNOLOGY CORP

Method of fabricating a shallow trench isolation structure

Methods for manufacturing stacked gate structure and field effect transistor provided with the same

Method of making a bit line contact device

Trench isolation structure and method of forming the same

Method of reducing the aspect ratio of a trench

Method for forming a trench isolation structure

Manufacturing method of a high aspect ratio shallow trench isolation region

Manufacturing method for a shallow trench isolation region with high aspect ratio

Process of forming a bottle-shaped trench

Method of forming a high aspect ratio shallow trench isolation

Method for increasing capacitance of deep trench capacitors

Method for fabricating semiconductor device having stacked-gate structure

Method for fabricating semiconductor device having stacked-gate structure

Method of forming interconnects

Method for forming shallow trench isolation

Method for increasing area of a trench capacitor

Method for forming a deep trench capacitor buried plate

Method of reducing trench aspect ratio

Method for fabricating magnetoresistive random access memory element

Method of forming RRAM structure

Magnetoresistive random access memory element and fabrication method thereof

Non-volatile memory cell and fabrication method thereof

Method for preventing contact defects in interlayer dielectric layer

Method for fabricating trench isolation

Method for shallow trench isolation fabrication and partial oxide layer removal

Method and composite hard mask for forming deep trenches in a semiconductor substrate

Method for forming bottle-shaped trench

HSIEH CHUN-I

Resistive random access memory structure with tri-layer resistive stack

RRAM with improved resistance transformation characteristic and method of making the same

Magnetoresistive random access memory element and fabrication method thereof

Magnetoresistive random access memory element and fabrication method thereof

Non-volatile memory cell and fabrication method thereof

HO HSIN-JUNG

1T1R resistive memory device and fabrication method thereof

Single-sided access device and fabrication method thereof