Inventor
CHYI JEN-INN
TW43 patents
⚠️ This page may combine multiple inventors who share the name “CHYI JEN-INN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEKCORE CO LTD
10 patentsUS7598105B2Oct 6, 2009
Light emitting diode structure and method for fabricating the same
TEKCORE CO LTD22 citations92
US7166483B2Jan 23, 2007
High brightness light-emitting device and manufacturing process of the light-emitting device
TEKCORE CO LTD36 citations92
US6720570B2Apr 13, 2004
Gallium nitride-based semiconductor light emitting device
TEKCORE CO LTD22 citations92
US7713769B2May 11, 2010
Method for fabricating light emitting diode structure having irregular serrations
TEKCORE CO LTD10 citations84
US7335523B2Feb 26, 2008
Process for manufacturing a light-emitting device
TEKCORE CO LTD9 citations83
US8679881B1Mar 25, 2014
Growth method for reducing defect density of gallium nitride
TEKCORE CO LTD6 citations67
US7799593B2Sep 21, 2010
Light emitting diode structure and method for fabricating the same
TEKCORE CO LTD2 citations62
US6881602B2Apr 19, 2005
Gallium nitride-based semiconductor light emitting device and method
TEKCORE CO LTD3 citations62
US7462505B2Dec 9, 2008
Growth process of a crystalline gallium nitride based compound and semiconductor device including gallium nitride based compound
TEKCORE CO LTD4 citations58
US7227192B2Jun 5, 2007
Light-emitting device and manufacturing process of the light-emitting device
TEKCORE CO LTD1 citations51
UNIV NAT CENTRAL
10 patentsUS7608532B2Oct 27, 2009
Method of growing nitride semiconductor material
UNIV NAT CENTRAL4 citations62
US7445949B2Nov 4, 2008
Method of manufacturing semiconductor laser device structure
UNIV NAT CENTRAL2 citations62
US7705361B2Apr 27, 2010
Heterojunction bipolar transistor having (In)(Al) GaAsSb/InGaAs base-collector structure
UNIV NAT CENTRAL2 citations61
US7674642B2Mar 9, 2010
Method of fabricating linear cascade high-speed green light emitting diode
UNIV NAT CENTRAL2 citations59
US7456423B2Nov 25, 2008
Quantum dot optoelectronic device having an Sb-containing overgrown layer
UNIV NAT CENTRAL5 citations54
US9093510B2Jul 28, 2015
Field effect transistor device
UNIV NAT CENTRAL0 citations50
US8048786B2Nov 1, 2011
Method for fabricating single-crystalline substrate containing gallium nitride
UNIV NAT CENTRAL1 citations50
US9640672B2May 2, 2017
Diode device and method for manufacturing the same
UNIV NAT CENTRAL0 citations46
US9076650B2Jul 7, 2015
Method for fabricating mesa sidewall with spin coated dielectric material and semiconductor element thereof
UNIV NAT CENTRAL0 citations39
US9070708B2Jun 30, 2015
Semiconductor device and manufacturing method thereof
UNIV NAT CENTRAL0 citations37
NAT APPLIED RES LABORATORIES
3 patentsUS10134735B2Nov 20, 2018
Heterogeneously integrated semiconductor device and manufacturing method thereof
NAT APPLIED RES LABORATORIES3 citations71
US11515307B2Nov 29, 2022
Heterogeneously integrated semiconductor device and manufacturing method thereof
NAT APPLIED RES LABORATORIES0 citations61
US10727231B2Jul 28, 2020
Heterogeneously integrated semiconductor device and manufacturing method thereof
NAT APPLIED RES LABORATORIES0 citations51
LU HUNG-CHIH
3 patentsUS8406579B2Mar 26, 2013
Wavelength division multiplexing and optical modulation apparatus
LU HUNG-CHIH2 citations57
US8478091B2Jul 2, 2013
Single-Stage 1×5 grating-assisted wavelength division multiplexer
LU HUNG-CHIH1 citations47
US8594474B2Nov 26, 2013
Mach-Zehnder wavelength division multiplexer having flat passband and low crosstalk
LU HUNG-CHIH0 citations36
CHYI JEN-INN
3 patentsUS8524583B2Sep 3, 2013
Method for growing semipolar nitride
CHYI JEN-INN2 citations54
US8586995B2Nov 19, 2013
Semiconductor element having high breakdown voltage
CHYI JEN-INN1 citations47
US8426226B2Apr 23, 2013
Method for fabricating integrated alternating-current light-emitting-diode module
CHYI JEN-INN1 citations47
PREC INSTR DEV CT NAT SCIENCE
2 patentsUS6309895B1Oct 30, 2001
Method for fabricating capacitor containing amorphous and polycrystalline ferroelectric films and method for forming amorphous ferroelectric film
PREC INSTR DEV CT NAT SCIENCE62 citations93
US6514814B2Feb 4, 2003
Capacitor containing amorphous and polycrystalline ferroelectric films and fabrication method therefor, and method for forming amorphous ferroelectric film
PREC INSTR DEV CT NAT SCIENCE2 citations60