Inventor
Tsai Min-Ying
TW29 patents
Patents
29 patentsUS10658410B2May 19, 2020
Image sensor having improved full well capacity and related method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations84
US10395974B1Aug 27, 2019
Method for forming a thin semiconductor-on-insulator (SOI) substrate
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10163949B2Dec 25, 2018
Image device having multi-layered refractive layer on back surface
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9754993B2Sep 5, 2017
Deep trench isolations and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US11869761B2Jan 9, 2024
Back-side deep trench isolation structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations74
US11784204B2Oct 10, 2023
Enhanced trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11545513B2Jan 3, 2023
Image sensor having improved full well capacity and related method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11398516B2Jul 26, 2022
Conductive contact for ion through-substrate via
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10971534B2Apr 6, 2021
Image sensor having improved full well capacity and related method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10923503B2Feb 16, 2021
Semiconductor-on-insulator (SOI) substrate comprising a trap-rich layer with small grain sizes
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10867834B2Dec 15, 2020
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10163647B2Dec 25, 2018
Method for forming deep trench structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11817469B2Nov 14, 2023
Light absorbing layer to enhance P-type diffusion for DTI in image sensors
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations67
US12581762B2Mar 17, 2026
Enhanced trench isolation structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12408448B2Sep 2, 2025
Deep trench isolation structure and methods for fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12364046B2Jul 15, 2025
Photodiode structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12364048B2Jul 15, 2025
Conductive contact for ion through-substrate via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349492B2Jul 1, 2025
Photodiode structure for image sensor
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12328886B2Jun 10, 2025
Metal-insulator-metal capacitor and methods of manufacturing
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12191191B2Jan 7, 2025
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12087801B2Sep 10, 2024
Deep trench isolations and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12080738B2Sep 3, 2024
Image sensor having stacked metal oxide films as fixed charge film
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11929379B2Mar 12, 2024
Conductive contact for ion through-substrate via
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11217621B2Jan 4, 2022
Deep trench isolations and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11171039B2Nov 9, 2021
Composite semiconductor substrate, semiconductor device and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11101307B2Aug 24, 2021
Image sensor having stacked conformal films
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11069733B2Jul 20, 2021
Image sensor having improved full well capacity and related method of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10930547B2Feb 23, 2021
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11232975B2Jan 25, 2022
Semiconductor-on-insulator (SOI) substrate having dielectric structures that increase interface bonding strength
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52